MTA06N03J3 CYSTEKEC [Cystech Electonics Corp.], MTA06N03J3 Datasheet

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MTA06N03J3

Manufacturer Part Number
MTA06N03J3
Description
N-Channel Enhancement Mode Power MOSFET
Manufacturer
CYSTEKEC [Cystech Electonics Corp.]
Datasheet
N-Channel Enhancement Mode Power MOSFET
MTA06N03J3
Features
• 100% UIS testing, @V
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
Absolute Maximum Ratings
Note : 1. Pulse width limited by maximum junction temperature
MTA06N03J3
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, I
Repetitive Avalanche Energy@ L=0.05mH
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating Junction and Storage Temperature Range
G:Gate
D:Drain
S:Source
2. Duty cycle ≤ 1%
MTA06N03J3
D
Parameter
=15V, L=0.1mH, V
CYStech Electronics Corp.
C
C
=25℃
=100℃
C
C
=25°C
=100°C
D
=53A, R
(T
C
=25°C, unless otherwise noted)
G
G
=25Ω
=10V, I
(Note 1)
(Note 2)
L
=40V, rated V
Outline
Tj, Tstg
Symbol
V
E
E
I
I
V
Pd
I
I
DM
AS
AR
AS
DS
D
D
GS
DS
G D S
TO-252
=25V N-CH
BV
I
R
D
DS(ON)
DSS
-55~+175
Limits
±20
170
140
CYStek Product Specification
25
80
50
53
40
45
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
Page No. : 1/7
83
25V
80A
6mΩ
Unit
mJ
°C
W
V
A

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MTA06N03J3 Summary of contents

Page 1

... Avalanche Current Avalanche Energy @ L=0.1mH, I Repetitive Avalanche Energy@ L=0.05mH Total Power Dissipation @ T Total Power Dissipation @ T Operating Junction and Storage Temperature Range Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% MTA06N03J3 CYStech Electronics Corp. =10V, I =40V, rated Outline (T =25°C, unless otherwise noted) C =25° ...

Page 2

... Ciss - Coss - Crss - Rg - Source-Drain Diode * *trr - *Qrr - Ordering Information Device MTA06N03J3 (RoHS compliant & Halogen-free) MTA06N03J3 CYStech Electronics Corp. Typ. Max. Unit - - V 1 ± 100 - 1 μ 5 Ω 7.6 9 ...

Page 3

... T ,JUNC TION TE MPE R ATUR E(° ANS HAR TIC S 100 V = 10V ,GATE TO S OUR C E VOLTAGE GS MTA06N03J3 CYStech Electronics Corp. ON- RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE 3.5V 4. 3.8V 1.5 3.5V 1 0.5 2 ...

Page 4

... Transient Thermal Response Curve 1 Duty Cycle = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.03 0.01 0.02 S ingle Pulse 0. MTA06N03J3 CYStech Electronics Corp ERI ING LE P ULS E MAX IMUM POWE R DIS S IPATION ...

Page 5

... Reel Dimension Carrier Tape Dimension MTA06N03J3 CYStech Electronics Corp. Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 5/7 CYStek Product Specification ...

Page 6

... P Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface. MTA06N03J3 Peak Temperature 260 +0/-5 °C Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183° ...

Page 7

... CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTA06N03J3 CYStech Electronics Corp. C ...

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