MTA06N03J3 CYSTEKEC [Cystech Electonics Corp.], MTA06N03J3 Datasheet - Page 6

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MTA06N03J3

Manufacturer Part Number
MTA06N03J3
Description
N-Channel Enhancement Mode Power MOSFET
Manufacturer
CYSTEKEC [Cystech Electonics Corp.]
Datasheet
Recommended wave soldering condition
Recommended temperature profile for IR reflow
MTA06N03J3
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
Time within 5°C of actual peak
−Temperature Min(T
−Temperature Max(T
−Time(ts
−Temperature (T
− Time (t
temperature(tp)
Time maintained above:
Peak Temperature(T
Average ramp-up rate
Pb-free devices
Ramp down rate
Profile feature
(Tsmax to Tp)
Product
L
Preheat
min
)
to ts
L
max
)
)
S
S
min)
P
CYStech Electronics Corp.
max)
)
Sn-Pb eutectic Assembly
Peak Temperature
3°C/second max.
6°C/second max.
60-120 seconds
60-150 seconds
6 minutes max.
10-30 seconds
260 +0/-5 °C
240 +0/-5 °C
100°C
150°C
183°C
3°C/second max.
6°C/second max.
Pb-free Assembly
60-180 seconds
60-150 seconds
8 minutes max.
20-40 seconds
5 +1/-1 seconds
Soldering Time
260 +0/-5 °C
CYStek Product Specification
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
Page No. : 6/7
150°C
200°C
217°C

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