SI8411DB-T1 VISHAY [Vishay Siliconix], SI8411DB-T1 Datasheet

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SI8411DB-T1

Manufacturer Part Number
SI8411DB-T1
Description
P-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
b.
Document Number: 72444
S-32349—Rev. A, 17-Nov-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditions
Package Reflow Conditions
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (drain)
V
Surface Mounted on 1” x 1” FR4 Board.
Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
i
DS
3
4
−20
−20
(V)
Bump Side View
D
S
J
ti
t A bi
D
G
MICRO FOOT
2
1
b
b
0.075 @ V
0.054 @ V
J
J
a
a
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
GS
GS
a
a
Backside View
= −2.5 V
= −4.5 V
(W)
P-Channel 20-V (D-S) MOSFET
8411
xxx
a
A
= 25_C UNLESS OTHERWISE NOTED)
IR/Convection
Steady State
Steady State
Device Marking: 8411
Ordering Information: Si8411DB-T1
T
T
T
T
t v 5 sec
I
New Product
A
A
A
A
D
−5.9
−5.0
VPR
= 25_C
= 70_C
= 25_C
= 70_C
(A)
xxx = Date/Lot Traceability Code
Symbol
Symbol
T
R
R
R
FEATURES
D TrenchFETr Power MOSFET
D New MICRO FOOTr Chipscale Packaging
APPLICATIONS
D Load Switch
D Battery Switch
D Charger Switch
D PA Switch
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
stg
Typical
5 secs
−5.9
−4.7
−2.5
2.77
1.77
35
72
16
−55 to 150
"12
−20
−25
215
220
Steady State
Maximum
G
Vishay Siliconix
P-Channel MOSFET
−4.3
−3.4
−1.3
1.47
0.94
45
85
20
Si8411DB
S
D
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI8411DB-T1 Summary of contents

Page 1

... D New MICRO FOOTr Chipscale Packaging D Reduces Footprint Area Profile (0.62 mm) and −5.9 On-Resistance Per Footprint Area −5.0 APPLICATIONS D Load Switch D Battery Switch D Charger Switch D PA Switch Device Marking: 8411 xxx = Date/Lot Traceability Code Ordering Information: Si8411DB-T1 = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C ...

Page 2

... Si8411DB Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 72444 S-32349—Rev. A, 17-Nov-03 New Product 25_C J 1.2 1.4 1.6 Si8411DB Vishay Siliconix Capacitance 2000 C iss 1600 1200 800 C oss 400 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si8411DB Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA D 0.3 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product 100 125 150 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72444 S-32349—Rev. A, 17-Nov-03 New Product −2 − Square Wave Pulse Duration (sec) Si8411DB Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Si8411DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP ( 0.8-mm PITCH Recommended Land 8411 XXX Mark on Backside of Die NOTES (Unless Otherwise Specified): 1. Laser mark on the silicon die back, coated with a thin metal. 2. Bumps are Eutectic solder 63/57 Sn/Pb. 3. Non-solder mask defined copper landing pad. ...

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