SI8411DB-T1 VISHAY [Vishay Siliconix], SI8411DB-T1 Datasheet - Page 4

• Manufacturer Part Number: SI8411DB-T1
• Description: P-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si8411DB
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4
−0.1
−0.2
0.4
0.3
0.2
0.1
0.0
0.01
−50
0.1
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
I
D
J
− Temperature (_C)
= 250 mA
25
10
−3
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
10
0.1
−2
r
DS(on)
Limited
125
I
D(on)
Single Pulse
T
A
V
Square Wave Pulse Duration (sec)
= 25_C
Limited
DS
150
New Product
− Drain-to-Source Voltage (V)
Safe Operating Area
1
10
−1
BV
DSS
Limited
10
I
DM
1
Limited
80
60
40
20
0
0.001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
Single Pulse Power, Juncion-To-Ambient
0.01
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
0.1
− T
Time (sec)
t
A
1
= P
t
2
DM
1
Z
thJA
thJA
100
S-32349—Rev. A, 17-Nov-03
t
t
1
2
Document Number: 72444
(t)
10
= 72_C/W
100
600
600