SI8411DB-T1 VISHAY [Vishay Siliconix], SI8411DB-T1 Datasheet - Page 2

• Manufacturer Part Number: SI8411DB-T1
• Description: P-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si8411DB
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
V
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
GS
= 5 thru 3.5 V
25
20
15
10
5
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
− Drain-to-Source Voltage (V)
a
2
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
4
SD
t
t
rr
fs
gs
gd
r
f
g
g
3 V
2.5 V
2 V
1.5 V
)
5
New Product
V
I
V
D
DS
DS
^ −1 A, V
= −10 V, V
V
I
= −20 V, V
V
F
V
V
V
V
DS
V
V
V
DS
GS
= −1 A, di/dt = 100 A/ms
DS
DD
DD
Test Condition
GS
I
DS
DS
S
v −5 V, V
= V
= −1 A, V
= −4.5 V, I
= −20 V, V
= −10 V, R
= −10 V, R
= −2.5 V, I
= −10 V, I
= 0 V, V
GEN
GS
GS
GS
, I
= −4.5 V, R
= −4.5 V, I
D
= 0 V, T
GS
GS
GS
= −250 mA
D
GS
D
L
L
D
= "12 V
= −4.5 V
= −1 A
= 0 V
= 10 W
= 10 W
= −1 A
= −1 A
= 0 V
J
= 70_C
D
G
25
20
15
10
= −1 A
5
0
= 6 W
0.0
0.5
V
GS
Min
−0.6
Transfer Characteristics
−5
1.0
25_C
− Gate-to-Source Voltage (V)
T
C
= 125_C
1.5
0.045
0.065
Typ
−0.8
105
1.7
5.1
14
18
31
50
90
85
7
S-32349—Rev. A, 17-Nov-03
2.0
Document Number: 72444
−55_C
"100
Max
0.054
0.075
−1.4
−1.1
2.5
160
135
130
−1
−5
21
50
75
3.0
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
W
3.5