HMC590_09 HITTITE [Hittite Microwave Corporation], HMC590_09 Datasheet

HMC590_09

Manufacturer Part Number

HMC590_09

Description

GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz

Manufacturer

HITTITE [Hittite Microwave Corporation]

Datasheet

1.HMC590_09.pdf (8 pages)

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Typical Applications

The HMC590 is ideal for use as a power amplifi er for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Test Equipment & Sensors

• Military End-Use

• Space

Functional Diagram

Electrical Specifi cations,

Frequency Range

Gain

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

Output Power for 1 dB

Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)

[1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical.

[2] Measurement taken at 7V @ 520mA, Pin / Tone = -15 dBm

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Parameter

[2]

v02.0109

Order On-line at www.hittite.com

= +25° C, Vdd = +7V, Idd = 820 mA

Min.

6 - 10

Typ.

0.05

31.5

820

Features

Saturated Output Power: +31.5 dBm @ 25% PAE

Output IP3: +41 dBm

Gain: 24 dB

DC Supply: +7V @ 820 mA

50 Ohm Matched Input/Output

Die Size: 2.47 x 1.33 x 0.1 mm

General Description

The HMC590 is a high dynamic range GaAs PHEMT

MMIC 1 Watt Power Amplifi er which operates from

6 to 10 GHz. This amplifi er die provides 24 dB of

gain, +31.5 dBm of saturated power at 25% PAE

from a +7V supply. The RF I/Os are DC blocked and

matched to 50 Ohms for ease of integration into Multi-

Chip-Modules (MCMs). All data is taken with the chip

in a 50 ohm test fi xture connected via 0.025mm (1

mil) diameter wire bonds of length 0.31mm (12 mils).

For applications which require optimum OIP3, Idd

should be set for 520 mA, to yield +41 dBm OIP3.

For applications which require optimum output P1dB,

Idd should be set for 820 mA, to yield up to +32 dBm

Output P1dB.

POWER AMPLIFIER, 6 - 10 GHz

Max.

0.07

GaAs PHEMT MMIC 1 WATT

Min.

28.5

[1]

6.8 - 9

Typ.

0.05

31.5

820

HMC590

Max.

0.07

dB/ °C

Units

dBm

GHz

Related parts for HMC590_09

HMC590_09 Summary of contents

Page 1

Typical Applications The HMC590 is ideal for use as a power amplifi er for: • Point-to-Point Radios 3 • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military End-Use • Space Functional Diagram Electrical Specifi cations, Parameter Frequency Range Gain ...

Page 2

Broadband Gain & Return Loss S21 S11 5 S22 0 -5 -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 -10 -15 -20 ...

Page 3

P1dB vs. Current 6.5 7 7.5 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 520 mA, Pin/Tone = -15 dBm 6.5 7 7.5 FREQUENCY (GHz) ...

Page 4

Gain & Power vs. Supply Voltage @ 8 GHz Gain P1dB Psat 6.5 7 Vdd SUPPLY VOLTAGE (Vdc) Reverse Isolation vs. Temperature 820 mA 0 -10 -20 -30 +25C ...

Page 5

Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) RF Input Power (RFIN)(Vdd = +7.0 Vdc) 3 Channel Temperature Continuous Pdiss (T= 85 °C) (derate 67 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature ...

Page 6

Pad Descriptions Pad Number Function 1 RFIN Gate control for amplifi er. Adjust to achieve Idd of 820 mA. Please follow “MMIC Amplifi er Biasing Procedure” 2 Vgg Application Note. External bypass capacitors of 100 pF and Power Supply ...

Page 7

Assembly Diagram 3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER GHz ...

Page 8

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) ...

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