74AVCH2T45GF,115 NXP Semiconductors, 74AVCH2T45GF,115 Datasheet

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74AVCH2T45GF,115

Manufacturer Part Number
74AVCH2T45GF,115
Description
Bus Transceivers 3.6V 250mW 15.8ns
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 74AVCH2T45GF,115

Rohs
yes
Propagation Delay Time
15.8 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
0.8 V
Maximum Operating Temperature
+ 125 C
Package / Case
XSON-8
Maximum Power Dissipation
250 mW
Mounting Style
SMD/SMT
Factory Pack Quantity
5000
1. General description
2. Features and benefits
The 74AVCH2T45 is a dual bit, dual supply transceiver that enables bidirectional level
translation. It features two data input-output ports (nA and nB), a direction control input
(DIR) and dual supply pins (V
any voltage between 0.8 V and 3.6 V making the device suitable for translating between
any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins nA and DIR
are referenced to V
transmission from nA to nB and a LOW on DIR allows transmission from nB to nA.
The device is fully specified for partial power-down applications using I
circuitry disables the output, preventing any damaging backflow current through the
device when it is powered down. In suspend mode when either V
GND level, both A and B are in the high-impedance OFF-state.
The 74AVCH2T45 has active bus hold circuitry which is provided to hold unused or
floating data inputs at a valid logic level. This feature eliminates the need for external
pull-up or pull-down resistors.
74AVCH2T45
Dual-bit, dual-supply voltage level translator/transceiver;
3-state
Rev. 6 — 2 April 2013
Wide supply voltage range:
High noise immunity
Complies with JEDEC standards:
ESD protection:
Maximum data rates:
V
V
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
HBM JESD22-A114F Class 3B exceeds 8000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101C exceeds 1000 V
500 Mbps (1.8 V to 3.3 V translation)
320 Mbps (< 1.8 V to 3.3 V translation)
320 Mbps (translate to 2.5 V or 1.8 V)
CC(A)
CC(B)
: 0.8 V to 3.6 V
: 0.8 V to 3.6 V
CC(A)
and pins nB are referenced to V
CC(A)
and V
CC(B)
). Both V
CC(A)
CC(B)
and V
. A HIGH on DIR allows
CC(A)
CC(B)
Product data sheet
or V
OFF
can be supplied at
. The I
CC(B)
are at
OFF

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74AVCH2T45GF,115 Summary of contents

Page 1

Dual-bit, dual-supply voltage level translator/transceiver; 3-state Rev. 6 — 2 April 2013 1. General description The 74AVCH2T45 is a dual bit, dual supply transceiver that enables bidirectional level translation. It features two data input-output ports (nA and nB), a ...

Page 2

... NXP Semiconductors  280 Mbps (translate to 1.5 V)  240 Mbps (translate to 1.2 V)  Suspend mode  Bus hold on data inputs  Latch-up performance exceeds 100 mA per JESD 78 Class II  Inputs accept voltages up to 3.6 V  Low noise overshoot and undershoot <  ...

Page 3

... NXP Semiconductors 5. Functional diagram 5 DIR CC(A) Fig 1. Logic symbol 6. Pinning information 6.1 Pinning Fig 3. Pin configuration SOT765-1 74AVCH2T45 V 1 CC( GND 4 Transparent top view Fig 4. Pin configuration SOT833-1, SOT1089, SOT1116 and SOT1203 74AVCH2T45 Product data sheet Dual-bit, dual-supply voltage level translator/transceiver; 3-state ...

Page 4

... NXP Semiconductors 6.2 Pin description Table 3. Pin description Symbol Pin V 1 CC( GND 4 DIR CC(B) 7. Functional description [1] Table 4. Function table Supply voltage Input DIR CC(A) CC( [4] GND X [ HIGH voltage level LOW voltage level don’t care high-impedance OFF-state. ...

Page 5

... NXP Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage A CC(A) V supply voltage B CC(B) I input clamping current IK V input voltage I I output clamping current OK V output voltage ...

Page 6

... NXP Semiconductors 10. Static characteristics Table 7. Typical static characteristics recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I bus hold LOW current BHL I bus hold HIGH current ...

Page 7

... NXP Semiconductors Table 8. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions V HIGH-level data input IH input voltage V CCI V CCI V CCI V CCI DIR input V CC(A) V CC(A) V CC(A) V CC(A) V LOW-level data input IL input voltage V CCI V CCI V CCI V CCI DIR input ...

Page 8

... NXP Semiconductors Table 8. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions V LOW-level output voltage = 100  CC CC CC(A) I input leakage DIR input; V ...

Page 9

... NXP Semiconductors Table 8. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions I power-off A port; V OFF leakage V CC(A) current B port CC(B) I supply current A port CC(A) V CC(B) V CC(A) V CC(A) B port CC(A) V CC(B) V CC(A) V CC(A) A plus B port ( CC(A) V CC(B) [ the supply voltage associated with the output port. ...

Page 10

... NXP Semiconductors 11. Dynamic characteristics Table 9. Typical dynamic characteristics at V Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions t propagation delay disable time DIR to A dis DIR enable time DIR DIR to B [1] ...

Page 11

... NXP Semiconductors Dynamic characteristics for temperature range 40 C to +85 C Table 12. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions 1.3 V CC(A) t propagation delay disable time DIR to A dis DIR enable time ...

Page 12

... NXP Semiconductors Dynamic characteristics for temperature range 40 C to +125 C Table 13. Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions 1.3 V CC(A) t propagation delay disable time DIR to A dis DIR enable time ...

Page 13

... NXP Semiconductors 12. Waveforms Measurement points are given in V and V are typical output voltage levels that occur with the output load Fig 6. The data input (nA, nB) to output (nB, nA) propagation delay times DIR input output LOW-to-OFF OFF-to-LOW output HIGH-to-OFF ...

Page 14

... NXP Semiconductors Test data is given in Table R = Load resistance Load capacitance including jig and probe capacitance Termination resistance External voltage for measuring switching times. EXT Fig 8. Test circuit for measuring switching times Table 15. Test data Supply voltage Input [ ...

Page 15

... NXP Semiconductors 13. Application information 13.1 Unidirectional logic level-shifting application The circuit given in unidirectional logic level-shifting application. Fig 9. Table 16. Pin 74AVCH2T45 Product data sheet Dual-bit, dual-supply voltage level translator/transceiver; 3-state Figure example of the 74AVCH2T45 being used CC1 ...

Page 16

... NXP Semiconductors 13.2 Bidirectional logic level-shifting application Figure 10 application. Since the device does not have an output enable (OE) pin, the system designer should take precautions to avoid bus contention between system-1 and system-2 when changing directions. Fig 10. Bidirectional logic level-shifting application Table 17 and then from system-2 to system-1. ...

Page 17

... NXP Semiconductors 13.3 Power-up considerations The device is designed such that no special power-up sequence is required other than GND being applied first. Table 18. V CC( 0.8 V 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V 13.4 Enable times The enable times for the 74AVCH2T45 are calculated from the following formulas: • • ...

Page 18

... NXP Semiconductors 14. Package outline VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0. 0.12 0.00 0.60 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. ...

Page 19

... NXP Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1. 8× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 2.0 mm 0.5 0.04 0.17 1.9 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...

Page 20

... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1. 0.5 mm terminal 1 index area (2) (4× terminal 1 index area Dimensions (1) Unit max 0.5 0.04 0.20 1.40 mm nom 0.15 1.35 min 0.12 1.30 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version ...

Page 21

... NXP Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 0.5 mm terminal 1 index area Dimensions (mm are the original dimensions) (1) Unit max 0.05 0.35 2.1 mm nom 0.5 min 0.00 0.15 1.9 Outline version IEC SOT996-2 Fig 14. Package outline SOT996-2 (XSON8) 74AVCH2T45 Product data sheet Dual-bit, dual-supply voltage level translator/transceiver ...

Page 22

... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1.2 x 1 (2) (8×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.25 mm nom 0.15 1.20 min 0.12 1.15 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1116 Fig 15. Package outline SOT1116 (XSON8) ...

Page 23

... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1.35 x 1 (2) (8×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.40 mm nom 0.15 1.35 min 0.12 1.30 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1203 Fig 16. Package outline SOT1203 (XSON8) ...

Page 24

... NXP Semiconductors 15. Abbreviations Table 19. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 16. Revision history Table 20. Revision history Document ID Release date 74AVCH2T45 v.6 20130402 • Modifications: For type number 74AVCH2T45GD XSON8U has changed to XSON8. ...

Page 25

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 26

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 27

... NXP Semiconductors 19. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Functional description . . . . . . . . . . . . . . . . . . . 4 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . 10 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 Application information ...

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