M24C64-WMN6TP STMicroelectronics, M24C64-WMN6TP Datasheet - Page 26

• Manufacturer Part Number: M24C64-WMN6TP
• Description: IC EEPROM 64KBIT 400KHZ 8SOIC
• Manufacturer: STMicroelectronics

Specifications of M24C64-WMN6TP

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 64K (8K x 8)
• Speed: 400kHz
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Density: 64Kb
• Interface Type: Serial (I2C)
• Organization: 8Kx8
• Access Time (max): 900ns
• Frequency (max): 400KHz
• Write Protection: Yes
• Data Retention: 40Year
• Operating Supply Voltage (typ): 3.3/5V
• Package Type: SOIC
• Operating Temp Range: -40C to 85C
• Supply Current: 5mA
• Operating Supply Voltage (min): 2.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 8
• Maximum Clock Frequency: 0.4 MHz
• Access Time: 900 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.5 V
• Maximum Operating Current: 2 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 3.3 V, 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8650-2; M24C64-WMN6TP; Q2040217A

DC and AC parameters
26/44
Table 12.
1. Only for devices operating at f
2. Characterized value, not tested in production.
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
4. The new M24C64-W devices (identified by the process letter K) offer I
Symbol
I
I
V
I
V
I
CC0
CC1
V
completion of the internal write cycle t
I
CC
LO
LI
OL
IH
IL
Input leakage current
(SCL, SDA, E2, E1,
E0)
Output leakage
current
Supply current (Read)
Supply current (Write) During t
Standby supply
current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24xxx-W, device grade 6)
Parameter
C
max = 1 MHz (see
Doc ID 16891 Rev 23
V
device in Standby mode
SDA in Hi-Z, external voltage applied
on SDA: V
2.5 V < V
(rise/fall time < 50 ns)
2.5 V < V
(rise/fall time < 50 ns)
Device not selected
V
Device not selected
V
I
I
OL
OL
IN
CC
CC
Test conditions (see
W
= 2.1 mA, V
= 3 mA, V
= V
, V
, V
(t
W
CC
CC
SS
W
is triggered by the correct decoding of a Write instruction).
CC
CC
, 2.5 V < V
= 2.5 V
= 5.5 V
or V
SS
< 5.5 V, f
< 5.5 V, f
M24C64-DF, M24C64-W, M24C64-R, M24C64-F
or V
CC
CC
Table
Table
CC
= 5.5 V
CC
= 2.5 V or
(3)
(3)
CC
17)
10)
c
c
, V
, V
= 400 kHz
= 1 MHz
< 5.5 V
IN
IN
Table 7
= V
= V
SS
SS
(1)
CC1
and
or
or
= 3µA (max)
0.7V
0.7V
–0.45
Min.
CC
CC
V
0.3V
CC
Max.
5
5
± 2
± 2
2.5
6.5
0.4
2
2
(2)
(4)
+0.6
CC
Unit
mA
mA
mA
µA
µA
µA
µA
V
V
V