M95256-RMN6TP STMicroelectronics, M95256-RMN6TP Datasheet - Page 32

• Manufacturer Part Number: M95256-RMN6TP
• Description: IC EEPROM 256KBIT 2MHZ 8SOIC
• Manufacturer: STMicroelectronics

Specifications of M95256-RMN6TP

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 256K (32K x 8)
• Speed: 2MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Organization: 32 K x 8
• Interface Type: SPI
• Maximum Clock Frequency: 5 MHz
• Access Time: 150 ns
• Supply Voltage (max): 6.5 V
• Supply Voltage (min): 1.8 V
• Maximum Operating Current: 3 mA
• Maximum Operating Temperature: + 130 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 2.5 V, 3.3 V, 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6354-2

DC and AC parameters
Table 15.
1. Characterized value, not tested in production.
Table 16.
1.
2. 2 mA for the M95256-D and M95256 in MLP8 package MC
3. Only the M95256-D and M95256 in MLP8 package MC can run at 5 MHz (Preliminary data)
4. Characterized value, not tested in production.
5. 1 µA for the M95256-D and M95256 in MLP8 package MC
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Symbol
Symbol
I
I
CC0
CC0
I
V
I
V
V
V
I
V
V
I
CC1
V
I
I
refer to
CC1
V
I
LO
CC
I
CC
If the application uses the M95256-R, M95256-DR device with 2.5 V < VCC < 5.5 V and -40 °C < TA < +85 °C, please
LO
OH
OH
LI
OL
OL
LI
IH
IL
IH
IL
(1)
(4)
Table 14: DC characteristics (M95256-W, device grade 6)
Input leakage current
Output leakage current
Supply current (Read)
Supply current (Write)
Supply current
(Standby Power mode)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Input leakage current
Output leakage current
Supply current (Read)
Supply current (Write)
Supply current
(Standby Power mode)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
DC characteristics (M95256-W, device grade 3)
DC characteristics (M95256-R, M95256-DR, device grade 6)
Parameter
Parameter
Test conditions specified in
Test conditions specified in
V
V
CC
CC
V
C = 0.1V
CC
= 1.8 V, C = 0.1V
= 1.8 V, C = 0.1V
V
= 1.8 V, S = V
CC
S = V
I
I
OH
OL
Doc ID 12276 Rev 13
S = V
I
= 1.8 V, during t
S = V
OH
I
CC
OL
= 0.15 mA, V
= –0.1 mA, V
1.8 V V
1.8 V V
V
CC
2.5 V < V
/0.9V
During t
2.5 V < V
= –0.4 mA, V
= 1.5 mA, V
IN
V
CC
, V
Table 11
CC
= V
Q = open
Q = open
IN
and
, V
OUT
, V
= V
Q = open
CC
SS
CC
OUT
CC
CC
IN
Table 11
CC
CC
W
= V
SS
at 5 MHz, V
, V
CC
CC
or V
, S = V
< 2.5 V
< 2.5 V
= V
instead of the above table.
/0.9V
/0.9V
CC
(1)
CC
= V
or V
IN
SS
W
CC
< 5.5 V
M95256-DR, M95256, M95256-W, M95256-R
< 5.5 V
CC
SS
CC
, S = V
= V
= 1.8 V
= 1.8 V
SS
or V
CC
= 2.5 V
CC
CC
Table 10
Table 9
CC
or V
= 2.5 V
or V
SS
,
CC
at 2 MHz,
at 5 MHz,
CC
CC
or V
CC
CC
= 2.5 V,
(grade 3)
CC
and
0.75 V
0.8 V
–0.45
Min
0.7 V
0.8 V
–0.45
Min.
CC
CC
CC
CC
0.25 V
V
Max
1
2
3
CC
± 2
± 2
0.3
0.3 V
V
3
(3)
(5)
(2)
Max.
+1
CC
± 2
± 2
0.4
CC
3
6
5
+1
CC
Unit
mA
mA
µA
µA
µA
V
V
V
V
Unit
mA
mA
µA
µA
µA
V
V
V
V