CY62167DV30LL-55BVI Cypress Semiconductor Corp, CY62167DV30LL-55BVI Datasheet - Page 7

• Manufacturer Part Number: CY62167DV30LL-55BVI
• Description: IC SRAM 16MBIT 55NS 48VFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62167DV30LL-55BVI

• Memory Size: 16M (2M x 8 or 1M x 16)
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Memory Configuration: 2M X 8 / 1M X 16
• Access Time: 55ns
• Supply Voltage Range: 2.2V To 3.6V
• Memory Case Style: BGA
• No. Of Pins: 48
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS compliant by exemption

Switching Waveforms
Notes
Document Number : 38-05328 Rev. *I
DATA OUT
CURRENT
19. The device is continuously selected. OE, CE
20. WE is HIGH for read cycle.
21. Address valid prior to or coincident with CE
ADDRESS
DATA OUT
ADDRESS
BHE/BLE
SUPPLY
V
CE
CE
OE
CC
1
2
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
Figure 2. Read Cycle 1 (Address Transition Controlled)
t
LZCE
t
LZBE
1
t
t
, BHE, BLE transition LOW and CE
ACE
LZOE
1
= V
Figure 3. Read Cycle 2 (OE Controlled)
t
IL
OHA
50%
t
, BHE and/or BLE = V
t
DOE
DBE
t
AA
t
RC
IL
, and CE
2
transition HIGH.
2
t
RC
= V
IH
.
DATA VALID
[20, 21]
[19, 20]
t
DATA VALID
HZOE
CY62167DV30 MoBL
t
HZBE
t
HZCE
t
PD
50%
IMPEDANCE
HIGH
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