CY62167DV30LL-55BVI Cypress Semiconductor Corp, CY62167DV30LL-55BVI Datasheet - Page 8

• Manufacturer Part Number: CY62167DV30LL-55BVI
• Description: IC SRAM 16MBIT 55NS 48VFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62167DV30LL-55BVI

• Memory Size: 16M (2M x 8 or 1M x 16)
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Memory Configuration: 2M X 8 / 1M X 16
• Access Time: 55ns
• Supply Voltage Range: 2.2V To 3.6V
• Memory Case Style: BGA
• No. Of Pins: 48
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS compliant by exemption

Switching Waveforms
Notes
Document Number : 38-05328 Rev. *I
22. The internal Write time of the memory is defined by the overlap of WE, CE
23. Data I/O is high-impedance if OE = V
24. If CE
25. During this period, the I/Os are in output state and input signals should not be applied.
ADDRESS
BHE/BLE
a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal
that terminates the Write.
DATA I/O
1
goes HIGH and CE
CE
CE
WE
OE
2
1
See Note 25
2
goes LOW simultaneously with WE = V
(continued)
IH
.
t
SA
t
HZOE
Figure 4. Write Cycle 1 (WE Controlled)
t
AW
IH
, the output remains in a high-impedance state.
t
SCE
1
= V
t
WC
IL
, BHE and/or BLE = V
t
BW
VALID DATA
t
t
PWE
SD
[22, 23, 24]
IL
, and CE
2
= V
CY62167DV30 MoBL
IH
. All signals must be ACTIVE to initiate
t
HA
t
HD
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