CY62148DV30LL-55SXI Cypress Semiconductor Corp, CY62148DV30LL-55SXI Datasheet - Page 4

• Manufacturer Part Number: CY62148DV30LL-55SXI
• Description: IC SRAM 4MBIT 55NS 32SOIC
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62148DV30LL-55SXI

• Memory Size: 4M (512K x 8)
• Package / Case: 32-SOIC (11.30mm Width)
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 55 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 10 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V, 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2074-5; CY62148DV30LL-55SXI

Document #: 38-05341 Rev. *D
AC Test Loads and Waveforms
Capacitance
Thermal Resistance
Data Retention Characteristics
Data Retention Waveform
Notes:
V
I
t
t
C
C
Parameter
Parameter
CCDR
CDR
R
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full Device AC operation requires linear V
Parameter
DR
IN
OUT
[9]
Θ
Θ
[8]
JA
JC
V
CE
Parameters
CC
OUTPUT
Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
R
V
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
R1
R2
TH
TH
CC
V
INCLUDING
(for all packages)
CC
for Data Retention
JIG AND
SCOPE
Description
Description
50 pF
Description
R1
[8]
CC
2.5V (2.2V – 2.7V)
R2
ramp from V
T
Still Air, soldered on a 3 x 4.5
inch, four-layer printed circuit
board
(Over the Operating Range)
A
t
CDR
= 25°C, f = 1 MHz, V
1.5V
16667
15385
8000
1.20
Equivalent to:
Test Conditions
DR
to V
V
V
CC(min)
CC
IN
> V
OUTPUT
= 1.5V, CE > V
Rise Time: 1 V/ns
V
CC
DATA RETENTION MODE
> 100 µs or stable at V
CC
GND
Test Conditions
− 0.2V or V
CC
THÉ VENIN EQUIVALENT
= V
V
DR
CC(typ)
10%
3.0V (2.7V – 3.6V)
Conditions
CC
> 1.5 V
IN
− 0.2V,
< 0.2V
VFBGA
R
1554
CC(min)
1103
8.86
TH
1.75
ALL INPUT PULSES
645
72
90%
Ind’l/Auto-A LL
> 100 µs.
V
Ind’l
TH
TSOP II
75.13
8.95
1.5V
L
90%
t
R
10%
Fall time: 1 V/ns
Min Typ
1.5
t
RC
0
CY62148DV30
SOIC
Max
55
22
10
10
Unit
Ω
Ω
Ω
V
[4]
Page 4 of 10
Max
9
6
°C/W
°C/W
Unit
Unit
pF
pF
Unit
µA
µA
ns
ns
V