M25PX80-VMW6TG NUMONYX, M25PX80-VMW6TG Datasheet - Page 50

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M25PX80-VMW6TG

Manufacturer Part Number
M25PX80-VMW6TG
Description
IC FLASH 8MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25PX80-VMW6TG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Package
8SO W
Cell Type
NOR
Density
8 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
2.5|3.3 V
Sector Size
64KByte x 32
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PX80-VMW6TGTR

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Table 18.
1. 50 MHz operation is also available on the VCC range 2.3 - 2.7 V.
2. t
3. Value guaranteed by characterization, not 100% tested in production.
50/60
Symbol
t
t
t
t
t
t
t
t
t
SHQZ
HHQX
WHSL
SHWL
CLCH
CHCL
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
CH
SLCH
CHSL
SHSL
CLQV
CLQX
HLCH
CHHL
DP
CL
CH
f
f
C
R
(2)
(3)
(2)
+ t
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(5)
(5)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
8. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
9. int(A) corresponds to the upper integer part of A. For example, int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
AC characteristics (50 MHz operation)
t
CLH
CSS
DSU
t
CSH
t
CLL
t
DIS
f
DH
HO
t
HZ
LZ
C
V
obtained with one sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤
256).
Clock frequency
FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI, RDID,
RDSR, WRSR
Clock frequency for read instructions
Clock high time
Clock low time
Clock rise time
Clock fall time
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock Low to Output Valid
Output hold time
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write protect setup time
Write protect hold time
S High to deep power-down mode
S High to standby mode without electronic signature read
S High to standby mode with electronic signature read
Test conditions specified in
(4)
(4)
(1)
(peak to peak)
(peak to peak)
for the following instructions: DOFR, DIFP,
C
.
Parameter
(1)
Table 13
and
Table 14.
D.C.
D.C.
Min
100
100
0.1
0.1
20
9
9
5
5
2
5
5
5
0
5
5
5
5
Typ
Max
50
25
30
30
8
8
8
8
3
MHz
MHz
Unit
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
μs

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