IRS2608DSPBF International Rectifier, IRS2608DSPBF Datasheet - Page 15

IC DVR HALF BRIDGE 600V 8-SOIC

IRS2608DSPBF

Manufacturer Part Number
IRS2608DSPBF
Description
IC DVR HALF BRIDGE 600V 8-SOIC
Manufacturer
International Rectifier
Datasheet

Specifications of IRS2608DSPBF

Configuration
Half Bridge
Input Type
Differential
Delay Time
250ns
Current - Peak
200mA
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
600V
Voltage - Supply
10 V ~ 20 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IRS2608DSPbF
Figure 18:
Negative V
transient SOA for IRS2608D @ VBS=15V
S
Even though the IRS2608D has been shown able to handle these large negative V
transient conditions, it is highly
S
recommended that the circuit designer always limit the negative V
transients as much as possible by careful PCB
S
layout and component use.
PCB Layout Tips
Distance between high and low voltage components: It’s strongly recommended to place the components tied to the
floating voltage pins (V
and V
) near the respective high voltage portions of the device.
Please see the Case Outline
B
S
information in this datasheet for the details.
Ground Plane: In order to minimize noise coupling, the ground plane should not be placed under or near the high
voltage floating side.
Gate Drive Loops: Current loops behave like antennas and are able to receive and transmit EM noise (see Figure 19).
In order to reduce the EM coupling and improve the power switch turn on/off performance, the gate drive loops must be
reduced as much as possible. Moreover, current can be injected inside the gate drive loop via the IGBT collector-to-gate
parasitic capacitance. The parasitic auto-inductance of the gate loop contributes to developing a voltage across the
gate-emitter, thus increasing the possibility of a self turn-on effect.
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