4N35-000E Avago Technologies US Inc., 4N35-000E Datasheet - Page 4

• Manufacturer Part Number: 4N35-000E
• Description: OPTOCOUPLER W/BASE 6-DIP
• Manufacturer: Avago Technologies US Inc.

Specifications of 4N35-000E

• Output Type: Transistor with Base
• Input Type: DC
• Package / Case: 6-DIP (0.300", 7.62mm)
• Number Of Channels: 1
• Voltage - Isolation: 3550Vrms
• Current Transfer Ratio (min): 100% @ 10mA
• Voltage - Output: 30V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 300mV
• Mounting Type: Through Hole
• Forward Current: 60 mA
• Maximum Fall Time: 10 us
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 10 us
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Isolation Voltage: 3550 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 350 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.5V
• Collector-emitter Voltage: 30V
• Package Type: PDIP
• Collector Current (dc) (max): 100mA
• Power Dissipation: 350mW
• Collector-emitter Saturation Voltage: 0.3V
• Fall Time: 10000ns
• Rise Time: 10000ns
• Pin Count: 6
• Mounting: Through Hole
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: DIP
• No. Of Pins: 6
• Breakdown Voltage: 30V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 516-1557-5

Solder Reflow Temperature Profile
1) One-time soldering reflow is recommended within
2) When using another soldering method such as in-
Absolute Maximum Ratings
4
Storage Temperature, T
Operating Temperature, T
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, I
Reverse Input Voltage, V
Input Power Dissipation, P
Collector Current, I
Collector-Emitter Voltage, V
Emitter-Collector Voltage, V
Collector-Base Voltage, V
Collector Power Dissipation
Total Power Dissipation
Isolation Voltage, V
(AC for 1 minute, R.H. = 40 ~ 60%)
the condition of temperature and time profile shown
at right.
frared ray lamp, the temperature may rise partially
in the mold of the device. Keep the temperature on
the package of the device within the condition of (1)
above.
C
iso
S
R
CBO
A
I
F
CEO
ECO
–55˚C to +150˚C
–55˚C to +100˚C
260˚C for 10 s
60 mA
6 V
100 mW
100 mA
30 V
7 V
70 V
300 mW
350 mW
3550 Vrms
25°C
Note: Non-halide flux should be used.
150°C
60 ~ 150 sec
200°C
217°C
Time (sec)
250°C
90 sec
60 sec
260°C (Peak Temperature)
30 seconds
60 sec