4N35-000E Avago Technologies US Inc., 4N35-000E Datasheet - Page 6

• Manufacturer Part Number: 4N35-000E
• Description: OPTOCOUPLER W/BASE 6-DIP
• Manufacturer: Avago Technologies US Inc.

Specifications of 4N35-000E

• Output Type: Transistor with Base
• Input Type: DC
• Package / Case: 6-DIP (0.300", 7.62mm)
• Number Of Channels: 1
• Voltage - Isolation: 3550Vrms
• Current Transfer Ratio (min): 100% @ 10mA
• Voltage - Output: 30V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 300mV
• Mounting Type: Through Hole
• Forward Current: 60 mA
• Maximum Fall Time: 10 us
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 10 us
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Isolation Voltage: 3550 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 350 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.5V
• Collector-emitter Voltage: 30V
• Package Type: PDIP
• Collector Current (dc) (max): 100mA
• Power Dissipation: 350mW
• Collector-emitter Saturation Voltage: 0.3V
• Fall Time: 10000ns
• Rise Time: 10000ns
• Pin Count: 6
• Mounting: Through Hole
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: DIP
• No. Of Pins: 6
• Breakdown Voltage: 30V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 516-1557-5

Figure 4. Current transfer ratio vs. forward current.
Figure 7. Collector-emitter saturation voltage vs.
temperature.
Figure 10. Frequency response.
6
180
160
140
120
100
-10
-15
-20
80
60
40
20
-5
0
5
0
0.1
0.5
0.12
0.10
0.08
0.06
0.04
0.02
0
-55
0.2
V
T
R
R
I
F
1
R
CE
A
R
500 kΩ
L
L
T
– FORWARD CURRENT – mA
L
BE
= 25°C
= 10 kΩ
= 100 Ω
A
= 1 kΩ
2
= 10 V
f – FREQUENCY – kHz
0.5
– AMBIENT TEMPERATURE – °C
I
=
I
-25
F
C
= 50 mA
= 2 mA
1
5
4N35 fig 10
4N35 fig 4
10
2
0
4N35 fig 7
20
5
25
100 kΩ
10
50
V
I
T
C
100 200
A
CE
20
50
= 2 mA
= 25°C
= 5 V
50
75
100
500
100
Figure 5. Collector current vs. collector-emitter volt-
age.
Figure 11. Collector-emitter saturation voltage vs.
forward current.
Figure 8. Collector dark current vs. temperature.
10
10
10
10
30
20
10
V
10
10
10
10
0
CE
-10
-11
-12
-13
-6
-7
-8
-9
0
-55
5
5
5
5
5
5
5
7
6
5
4
3
2
1
0
T
– COLLECTOR-EMITTER VOLTAGE – V
0
T
A
A
V
= 25°C
CE
-25
– AMBIENT TEMPERATURE – °C
I
F
– FORWARD CURRENT – mA
= 10 V
20
5
I
I
4N35 fig 5
F
F
I
I
5
F
F
4N35 fig 8
= 15 mA
= 10 mA
4N35 fig 11
40
= 5 mA
= 2 mA
60
I
I
I
I
I
I
C
C
C
C
C
C
10
= 0.5 mA
= 1 mA
= 2 mA
= 3 mA
= 6 mA
= 7 mA
10
P
80
C
T
A
(MAX.)
100
= 25°C
15
125
15
Figure 6. Relative current transfer ratio vs. tempera-
ture.
Figure 9. Response time vs. load resistance.
200
100
150
100
0.5
0.2
0.1
50
50
20
10
0.05
0
5
2
1
-55
T
A
V
I
T
C
R
CE
A
– AMBIENT TEMPERATURE – °C
-25
0.1
= 2 mA
L
= 25°C
– LOAD RESISTANCE – kΩ
= 10 V
0.2
0
0.5
4N35 fig 9
4N35 fig 6
25
1
2
50
5
V
I
F
CE
= 10 mA
10
75
tf
tr
td
ts
= 10 V
20 50
100