4N35-000E Avago Technologies US Inc., 4N35-000E Datasheet - Page 5

• Manufacturer Part Number: 4N35-000E
• Description: OPTOCOUPLER W/BASE 6-DIP
• Manufacturer: Avago Technologies US Inc.

Specifications of 4N35-000E

• Output Type: Transistor with Base
• Input Type: DC
• Package / Case: 6-DIP (0.300", 7.62mm)
• Number Of Channels: 1
• Voltage - Isolation: 3550Vrms
• Current Transfer Ratio (min): 100% @ 10mA
• Voltage - Output: 30V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 300mV
• Mounting Type: Through Hole
• Forward Current: 60 mA
• Maximum Fall Time: 10 us
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 10 us
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Isolation Voltage: 3550 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 350 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.5V
• Collector-emitter Voltage: 30V
• Package Type: PDIP
• Collector Current (dc) (max): 100mA
• Power Dissipation: 350mW
• Collector-emitter Saturation Voltage: 0.3V
• Fall Time: 10000ns
• Rise Time: 10000ns
• Pin Count: 6
• Mounting: Through Hole
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: DIP
• No. Of Pins: 6
• Breakdown Voltage: 30V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 516-1557-5

Electrical Specifications (T
* CTR =
Figure 1. Forward current vs. temperature.
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Current
*Current Transfer Ratio
Collector-Emitter Saturation Voltage
Response Time (Rise)
Response Time (Fall)
Isolation Resistance
Floating Capacitance
100
80
60
40
20
0
-55
T
A
-25
I
– AMBIENT TEMPERATURE – °C
I
C
F
x 100%
0
4N35 fig 1
25
50
A
= 25˚C)
75
100
125
Symbol
V
I
C
BV
BV
BV
I
CTR
V
t
t
R
C
R
I
C
r
f
CEO
t
CE(sat)
iso
f
F
Figure 2. Collector power dissipation vs. temperature.
CEO
ECO
CBO
400
300
200
100
0
-55
T
A
Min.
–
–
–
–
–
30
7
70
10
100
–
–
–
5 x 10
–
-25
– AMBIENT TEMPERATURE – °C
10
0
4N35 fig 2
25
Typ.
1.2
–
50
–
–
–
–
–
–
–
–
3
3
1 x 10
1
50
11
75
100
Max.
1.5
10
–
50
500
–
–
–
–
0.3
10
10
–
2.5
125
Figure 3. Forward current vs. forward voltage.
Units
V
µA
pF
nA
µA
V
V
V
mA
%
V
µs
µs
Ω
pF
500
200
100
50
20
10
5
2
1
0
T
T
T
A
A
A
V
0.5
F
= 75°C
= 50°C
= 25°C
Test Conditions
I
V
V = 0, f = 1 KHz
V
V
I
I
I
I
V
I
V
R
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
– FORWARD VOLTAGE – V
F
C
E
C
F
F
L
R
CE
CE
CE
CC
= 10 mA
= 0.1 mA, I
= 10 µA, I
= 0.1 mA, I
= 10 mA
= 50 mA, I
= 100 Ω
= 4 V
= 10 V, I
= 30 V, I
= 10 V
= 10 V, I
1.0
4N35 fig 3
1.5
F
F
F
C
C
= 0, T
= 0, T
F
= 0
F
= 2 mA
= 2 mA
= 0
= 0
2.0
A
A
T
T
= 25˚C
= 100˚C
A
A
= 0°C
= -25°C
2.5
3.0