MT16VDDF12864HG-335D2 Micron Technology Inc, MT16VDDF12864HG-335D2 Datasheet - Page 15

• Manufacturer Part Number: MT16VDDF12864HG-335D2
• Description: MODULE DDR SDRAM 1GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDF12864HG-335D2

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 167MHz
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1109

Table 13: I
Notes: 1–5, 8, 10, 12, 47; DDR SDRAM devices only; notes appear on pages 18–21; 0°C T
pdf: 09005aef80a77a90, source: 09005aef80a646bc
DDF16C64_128x64HG.fm - Rev. D 9/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: One device bank; Active-Precharge;
=
once per clock cycle; Address and control inputs changing once
every two clock cycles
OPERATING CURRENT: One device bank; Active-Read-
Precharge; Burst = 4;
0mA; Address and control inputs
PRECHARGE POWER-DOWN STANDBY CURRENT: All device
banks idle; Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks are idle;
t
changing once per clock
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode;
CKE = LOW
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH;
device bank active
DQS inputs changing twice per clock cycle; Address and other
control inputs changing once per clock cycle
OPERATING CURRENT: Burst = 2;
device bank active; Address and control inputs changing once per
clock cycle;
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
device bank
clock cycle;
twice per clock cycle
AUTO REFRESH BURST CURRENT:
SELF REFRESH CURRENT: CKE
OPERATING CURRENT: Four device bank interleaving READs
(Burst = 4) with auto precharge,
t
READ, or WRITE commands
NOTE:
CK =
CK (MIN); Address and control inputs change only during Active
t
RC (MIN);
a: Value calculated as one module rank in this operating condition, and all other module ranks in I
b: Value calculated reflects all module ranks in this operating condition.
t
CK (MIN);
t
t
CK =
CK =
t
active; Address and control inputs changing once per
CK =
DD
t
t
CKE = HIGH; Address and other control inputs
CK (MIN);
CK (MIN); DQ, DM, and DQS inputs changing
;
t
t
CK (MIN); DQ, DM and DQS inputs changing
RC =
Specifications and Conditions – 1GB
t
RC =
cycle. V
t
RAS (MAX);
I
t
t
OUT
RC (MIN);
CK =
0.2V
t
IN
= 0mA
RC = minimum
t
CK =
Reads; Continuous burst; One
t
= V
changing once per clock cycle
CK (MIN);
t
CK =
REF
t
t
CK (MIN);
CK =
for DQ, DQS, and DM
t
CK (MIN); DQ, DM and
t
t
REFC =
REFC = 7.8125µs
t
CK (MIN); I
t
RC allowed;
CKE = (LOW)
t
RFC (MIN)
One
OUT
15
t
CK =
t
=
RC
SYMBOL
I
I
I
I
I
I
I
DD4W
I
I
DD3N
I
DD5A
I
I
DD2P
DD2F
DD3P
DD4R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD5
DD6
DD0
DD1
DD7
a
a
b
b
a
b
b
b
a
b
b
a
1,080
1,320
1,360
1,440
4,640
3,280
-335
720
560
800
160
80
80
200-PIN DDR SODIMM
512MB, 1GB (x64, DR)
A
MAX
1,080
1,320
1,360
1,280
4,640
3,240
-262
720
560
800
160
+70°C; V
80
80
DD
-26A/
1,200
1,200
1,120
4,480
2,840
DD
-265
960
640
480
720
160
80
80
, V
2p (CKE LOW) mode.
DD
©2004 Micron Technology, Inc.
Q = +2.5V ±0.2V
UNITS NOTES
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
21, 28,
21, 28,
20, 41
20, 41
20, 41
20, 43
24, 43
20, 42
43
44
43
20
9