MT16VDDF12864HG-335D2 Micron Technology Inc, MT16VDDF12864HG-335D2 Datasheet - Page 28

• Manufacturer Part Number: MT16VDDF12864HG-335D2
• Description: MODULE DDR SDRAM 1GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDF12864HG-335D2

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 167MHz
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1109

Table 20: Serial Presence-Detect Matrix (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 28
NOTE:
pdf: 09005aef80a77a90, source: 09005aef80a646bc
DDF16C64_128x64HG.fm - Rev. D 9/04 EN
1. Device latencies used for SPD values.
2. The value of
3. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-case (slow slew rate) value is
4. The value of
99-127 Manufacturer-Specific Data (RSVD)
48–61
BYTE
36-40
65-71
73-90
95-98
represented here. Systems requiring the fast slew rate setup and hold values are supported, provided the faster mini-
mum slew rate is met.
SDRAM device specification is 15ns.
32
33
34
35
41
42
43
44
45
46
47
62
63
64
72
91
92
93
94
Address and Command Setup Time,
(See note 3)
Address and Command Hold Time,
(See note 3)
Data/ Data Mask Input Setup Time,
Data/ Data Mask Input Hold Time,
Reserved
Minimum Active Auto Refresh Time
Minimum Auto Refresh to Active/Auto Refresh
Command Period,
SDRAM Device Max Cycle Time,
SDRAM Device Max DQS-DQ Skew Time,
t
SDRAM Device Max Read Data Hold Skew
Factor ,
Reserved
DIMM Height
Reserved
SPD Revision
Checksum for Bytes 0-62
Manufacturer’s JEDEC ID Code
Manufacturer’s JEDEC ID Code (Continued)
Manufacturing Location
Module Part Number (ASCII)
PCB Identification Code
Identification Code (Continued)
Year of Manufacture in BCD
Week of Manufacture in BCD
Module Serial Number
DQSQ
t
RAS used for -262/-26A/-265 modules is calculated from
t
RP,
t
QHS
t
RCD, and
DESCRIPTION
t
RFC
t
RAP for -335 modules indicated as 18ns to align with industry specifications; actual DDR
t
CK
t
t
DH
MAX
t
IH
t
DS
t
IS
RC
0.5ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
75ns (-262/-26A/-265)
28
1ns (-262/-26A/-265)
1ns (-262/-26A/-265)
ENTRY (VERSION)
13ns (-262/-26A/-265)
0.75ns (-26A/-265)
65ns (-26A/-265)
60ns (-335/-262)
0.45ns (-335)
0.45ns (-335)
0.40ns (-335)
0.8ns (-335)
0.8ns (-335)
0.5ns (-335)
Release 1.0
72ns (-335)
12ns (-335)
MICRON
01–12
-26A
-335
-262
-265
1-9
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RC -
t
RP. Actual device spec value is 40 ns.
200-PIN DDR SODIMM
512MB, 1GB (x64, DR)
MT16VDDF6464H MT16VDDF12864H
Variable Data
Variable Data
Variable Data
Variable Data
01–0C
01-09
A0
A0
BB
80
80
45
50
45
50
00
3C
41
48
4B
30
34
28
32
50
75
00
01
00
10
1E
E8
18
2C
00
00
–
©2004 Micron Technology, Inc.
Variable Data
Variable Data
Variable Data
Variable Data
01–0C
01-09
A0
A0
80
80
45
50
45
50
00
3C
41
48
4B
30
34
28
32
50
75
00
01
00
10
5F
FC
29
59
2C
00
00
–