MT16VDDF12864HG-335D2 Micron Technology Inc, MT16VDDF12864HG-335D2 Datasheet - Page 16

• Manufacturer Part Number: MT16VDDF12864HG-335D2
• Description: MODULE DDR SDRAM 1GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDF12864HG-335D2

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 167MHz
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1109

Table 14: Capacitance
Note: 11; notes appear notes appear on pages 18–21
Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 48; notes appear on pages 18–21; 0°C
pdf: 09005aef80a77a90, source: 09005aef80a646bc
DDF16C64_128x64HG.fm - Rev. D 9/04 EN
AC CHARACTERISTICS
PARAMETER
Access window of DQs from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group,
per access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold time
Half clock period
Data-out high-impedance window from CK/CK#
Data-out low-impedance window from CK/CK#
Address and control input hold time (fast slew
rate)
Address and control input setup time (fast slew
rate)
Address and control input hold time (slow slew
rate)
Address and control input setup time (slow slew
rate)
Address and Control input pulse width (for each
input)
LOAD MODE REGISTER command cycle time
PARAMETER
Input/Output Capacitance: DQ, DQS,DM
Input Capacitance: Command and Address, RAS#, CAS#, WE#
Input Capacitance:CK, CK#, CKE, S#
Operating Conditions
CL = 2.5
CL = 2
SYMBOL
t
t
CK (2.5)
t
DQSCK
t
t
t
t
t
t
CK (2)
DQSQ
DQSH
DIPW
DQSL
DQSS
t
t
t
MRD
t
t
t
DSH
t
t
t
t
t
t
DSS
t
t
IPW
t
DH
AC
CH
DS
HP
HZ
IH
IH
CL
IS
IS
LZ
F
S
F
S
16
T
-0.70
-0.60
-0.70
MIN
0.45
0.45
0.45
0.45
1.75
0.35
0.35
0.75
0.20
0.20
0.75
0.75
7.5
0.8
0.8
2.2
A
12
6
t
CH,
-335
+70°C; V
t
MAX
+0.70
+0.60
CL
+0.70
0.55
0.55
1.25
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.4
13
13
DD
-0.75
-0.75
-0.75
MIN
= V
0.45
0.45
1.75
0.35
0.35
0.75
0.20
0.20
0.90
0.90
SYMBOL
7.5
7.5
0.5
0.5
2.2
15
1
1
t
CH,
C
DD
C
C
-262
IO
200-PIN DDR SODIMM
I1
I2
512MB, 1GB (x64, DR)
Q = +2.5V ±0.2V
t
MAX
+0.75
+0.75
CL
+0.75
0.55
0.55
1.25
0.5
13
13
7.5/10
-0.75
-0.75
-0.75
MIN
0.45
0.45
1.75
0.35
0.35
0.75
0.20
0.20
0.90
.900
7.5
0.5
0.5
2.2
-26A/-265
15
1
1
t
CH,
MIN
24
12
7
t
MAX
+0.75
+0.75
CL
+0.75
0.55
0.55
1.25
0.5
13
13
MAX
©2004 Micron Technology, Inc.
40
20
9
UNITS NOTES
t
t
t
t
t
t
t
ns
CK
CK
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNITS
40, 45
40, 45
23, 27
23, 27
22, 23
16, 37
16, 37
pF
pF
pF
26
26
27
12
12
12
12
8