STEVAL-ISA050V1 STMicroelectronics, STEVAL-ISA050V1 Datasheet - Page 25

KIT EVAL PM6641 CHIPSET/DDR2/3

STEVAL-ISA050V1

Manufacturer Part Number
STEVAL-ISA050V1
Description
KIT EVAL PM6641 CHIPSET/DDR2/3
Manufacturer
STMicroelectronics
Type
DC/DC Switching Converters, Regulators & Controllersr
Datasheets

Specifications of STEVAL-ISA050V1

Main Purpose
Special Purpose DC/DC, DDR Memory Supply
Outputs And Type
4, Non-Isolated
Power - Output
14.7W
Voltage - Output
1.05V, 1.5V, 1.8V, 0.9V
Current - Output
4A, 2.8A, 2.5A, 2A
Voltage - Input
2.7 ~ 5.5V
Regulator Topology
Buck
Frequency - Switching
750kHz
Board Type
Fully Populated
Utilized Ic / Part
PM6641
Input Voltage
2.7 V to 5.5 V
Product
Power Management Modules
Silicon Manufacturer
ST Micro
Silicon Core Number
PM6641
Kit Application Type
Power Management - Voltage Regulator
Application Sub Type
Monolithic Voltage Regulator
Kit Contents
Board
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
PM6641
Other names
497-8425

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STEVAL-ISA050V1
Manufacturer:
STMicroelectronics
Quantity:
1
PM6641
In order to obtain the typical integrative loop transfer function the signal stag e must
compensate for the power stage pole (due to the output capacitor and the load) and zero
(above the loop bandwidth if ceramic output capacitors are selected). The signal stage
transfer function is:
Equation 2
Where g
due to the output resistor divider (0.8 V / Vout). The external compensation network (R
and C
The control loop gain is obtained by multiplying G(s) by H(s):
Equation 3
This model provides good results if the control loop cut-off frequency f
fsw/10.
One zero, to compensate the power stage pole:
One pole in order to delete the static output voltage error;
One pole, if necessary, in order to compensate the high frequency zero due to the
output capacitor ESR:
RO
M
) introduces:
is the power stage transconductance, K
G
LOOP
(
) s
=
g
m
( G
K
L
) s
α
Doc ID 13510 Rev 3
=
sC
g
C
m
C
K
C
sC
R
L
C
(
sC
α
C
RO
Ro
sC
=
C
R
R
R
C
C
C
C
C
O
⎜ ⎜
=
+
sC
(
+
R
C
sC
C
1
C
O
Ro
O
)
Ro
C
R
L
C
+
R
R
ES
is a design parameter and α is the gain
R
+
C
C
ES
1
+
+
)
C
1
C
sC
Ro
C
(
O
sC
+
(
R
1
⎟ ⎟
O
ES
R
ES
+
R
CO
+
O
1
Device description
)
)
is lower than about
+
1
R
O
c
25/47
, C
c

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