NCP3065SOBSTGEVB ON Semiconductor, NCP3065SOBSTGEVB Datasheet - Page 14

• Manufacturer Part Number: NCP3065SOBSTGEVB
• Description: EVAL BOARD FOR NCP3065SOBSTG
• Manufacturer: ON Semiconductor

Specifications of NCP3065SOBSTGEVB

• Design Resources: NCP3065 Boost Eval Board BOM NCP3065SOBSTGEVB Gerber Files NCP3065 Boost Eval Board Schematic
• Current - Output / Channel: 350mA
• Outputs And Type: 1, Non-Isolated
• Voltage - Output: 20 V
• Voltage - Input: 12V
• Utilized Ic / Part: NCP3065
• Core Chip: NCP3065
• Topology: Buck-Boost
• No. Of Outputs: 1
• Dimming Control Type: PWM
• Development Tool Type: Hardware - Eval/Demo Board
• Leaded Process Compatible: Yes
• Mcu Supported Families: NCP3065
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• For Use With/related Products: NCP3065SOBSTG
• Other names: NCP3065SOBSTGEVBOS

Value of Components
Test Results
ON/OFF
+VAUX
ON/OFF
Name
C1
C1, C4, C8
C2, C6
C3
C5
C7
D1
D2
L1
Q2
Line Regulation
Output Ripple
Efficiency
Short Circuit Current
+VIN
GND
J2
J3
J4
J6
J6
1
1
1
1
1
0R04
R1
0.1 mF
0805
0805
1206 1206 1206 1206 1206 1206
R11
1k2
R11
1k2
R2
C4
Test
BC807−LT1G BC817−LT1G
Value
100 mF, 50 V, Electrolytic Capacitor
100 nF, Ceramic Capacitor, 1206
220 mF, 50 V, Electrolytic Capacitor
2.2 nF, Ceramic Capacitor, 0805
100 pF, Ceramic Capacitor, 0805
1 mF / 50 V, Ceramic Capacitor, 1206
MBRS540LT3G, Schottky Diode
MMSD4148T1G, Diode
22 mH
BC817−LT1G, SOT23
R3
6x 1R0 ±1%R
Q1
R4
Figure 25. Buck Demoboard with External Switch Application Schematic
+
220 mF / 50 V
R5
C2
Q2
1 mF / 50 V
R6
V
V
V
V
in
in
in
in
= 8 V to 35 V, I
= 12 V, I
= 12 V, I
= 12 V, Rload = 0.15 W
R7
C7
o
o
0805
+
10 k
= 3000 mA
= 3000 mA
R9
0.1 mF
C8
o
= 3000 mA
http://onsemi.com
8
7
6
5
N.C.
COMP
I
V
1 k
PK
Condition
CC
NCP3065
R15
SOIC8
14
MMBT3904LT1G
U1
NU
NU
R14
R13
TCAP
SWC
SWE
GND
Name
Q4
Q5
R1
R8
R9
R10
R11
R12, R16
U1
1
2
3
4
Q5
CT
MTB30P06V
Q4
0805
D2
MMSD4148
1.8 nF
C3
C5
Value
MTB30P06V, P−MOS transistor
MMBT3904LT1G
40 mW, Resistor 0.5 W
6k8, Resistor 0805
10k, Resistor 0805
1k, Resistor 0805
1k2, Resistor 0805
150 mW, Resistor 0.5 W
NCP3065, SOIC8
R10
15 k
R8
100 pF
1 k
MBRS140LT3G
PF0504.223NL
0R15 ±1%
R16
< 6%
< 6%
> 78%
D1
L1
1206
0.1 mF
0R15 ±1%
R12
Results
C1
220 mF /
50 V
+
C6
+LED
−LED
GND
J1
J5
J7
1
1
1