PESD1CAN,215 NXP Semiconductors, PESD1CAN,215 Datasheet - Page 5
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PESD1CAN,215
Manufacturer Part Number
PESD1CAN,215
Description
DIODE ESD PROTECTION SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PESD1CAN215.pdf
(12 pages)
Specifications of PESD1CAN,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Reverse Standoff (typ)
24V
Voltage - Breakdown
25.4V
Power (watts)
200W
Polarization
2 Channel Array - Bidirectional
Mounting Type
Surface Mount
Polarity
Bidirectional
Clamping Voltage
40 V
Operating Voltage
24 V
Breakdown Voltage
27.8 V
Termination Style
SMD/SMT
Peak Surge Current
3 A
Peak Pulse Power Dissipation
200 W
Capacitance
17 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
2.5 mm W x 3 mm L x 1.1 mm H
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4032-2
934059097215
PESD1CAN T/R
PESD1CAN T/R
934059097215
PESD1CAN T/R
PESD1CAN T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PESD1CAN,215
Manufacturer:
NXP Semiconductors
Quantity:
9 350
NXP Semiconductors
PESD1CAN_4
Product data sheet
Fig 3. Peak pulse power as a function of exponential
Fig 5. Diode capacitance as a function of reverse
P
(pF)
(W)
C
PP
10
10
10
d
10
20
16
12
8
4
0
4
3
2
T
pulse duration; typical values
f = 1 MHz; T
voltage; typical values
1
0
amb
= 25 C
5
10
amb
= 25 C
10
10
2
15
10
3
20
006aaa257
t
006aaa258
p
V
( s)
R
(V)
Rev. 04 — 15 February 2008
10
25
4
Fig 4. Relative variation of peak pulse power as a
Fig 6. V-I characteristics for a bidirectional ESD
P
PP(25 C)
V
P
CL
PP
1.2
0.8
0.4
V
0
function of junction temperature; typical values
protection diode
BR
0
V
RWM
50
CAN bus ESD protection diode
I
I
RM
PP
100
I
R
I
I
I
RM
R
PP
PESD1CAN
150
© NXP B.V. 2008. All rights reserved.
001aaa193
T
j
( C)
V
RWM
+
200
006aaa676
V
BR
V
5 of 12
CL