PESD3V3U1UT,215 NXP Semiconductors, PESD3V3U1UT,215 Datasheet - Page 3

• Manufacturer Part Number: PESD3V3U1UT,215
• Description: DIODE ULOW ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3U1UT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.8V
• Power (watts): 80W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 9 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 6.4 V
• Termination Style: SMD/SMT
• Peak Surge Current: 5 A
• Peak Pulse Power Dissipation: 80 W
• Capacitance: 0.6 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.4 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4047-2; 934059101215; PESD3V3U1UT T/R; PESD3V3U1UT T/R

NXP Semiconductors
5. Limiting values
PESDXU1UT_SER_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
P
I
T
T
T
PP
j
amb
stg
PP
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Limiting values
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
Rev. 02 — 20 August 2009
Ultra low capacitance ESD protection diode in SOT23 package
Conditions
8/20 s
8/20 s
PESDxU1UT series
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
65
65
© NXP B.V. 2009. All rights reserved.
Max
80
80
200
200
200
5
5
5
5
3
150
+150
+150
Unit
W
W
W
W
W
A
A
A
A
A
C
C
C
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