PESD3V3U1UT,215 NXP Semiconductors, PESD3V3U1UT,215 Datasheet - Page 6

• Manufacturer Part Number: PESD3V3U1UT,215
• Description: DIODE ULOW ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3U1UT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.8V
• Power (watts): 80W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 9 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 6.4 V
• Termination Style: SMD/SMT
• Peak Surge Current: 5 A
• Peak Pulse Power Dissipation: 80 W
• Capacitance: 0.6 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.4 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4047-2; 934059101215; PESD3V3U1UT T/R; PESD3V3U1UT T/R

NXP Semiconductors
PESDXU1UT_SER_2
Product data sheet
Fig 3.
V
CL
V-I characteristics
V
BR
V
RWM
P-N
+
I
I
I
I
RM
R
PP
006aaa407
Rev. 02 — 20 August 2009
Ultra low capacitance ESD protection diode in SOT23 package
V
Fig 4.
I
R(25˚C)
I
10
R
10
1
1
100
PESD3V3U1UT; PESD5V0U1UT
I
PESD12VU1UT; PESD15VU1UT; PESD24VU1UT
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
R
is less than 10 nA at 150 C for:
PESDxU1UT series
50
0
50
© NXP B.V. 2009. All rights reserved.
100
006aaa442
T
j
( C)
150
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