PESD3V3S4UD,115 NXP Semiconductors, PESD3V3S4UD,115 Datasheet - Page 5

• Manufacturer Part Number: PESD3V3S4UD,115
• Description: DIODE ARRAY ESD 3.3V 6-TSOP
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD3V3S4UD,115

• Package / Case: 6-TSOP
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.3V
• Power (watts): 200W
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 12 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 20 A
• Peak Pulse Power Dissipation: 200 W
• Capacitance: 215 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.7 mm W x 3.1 mm L x 1.1 mm H
• Number Of Elements: 4
• Package Type: SC-74
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 5.3V
• Reverse Stand-off Voltage: 3.3V
• Leakage Current (max): 800uA
• Peak Pulse Current: 20A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4266-2; 934059301115; PESD3V3S4UD T/R

NXP Semiconductors
PESDXS4UD_SER_2
Product data sheet
Fig 3.
P
(W)
PP
10
10
10
10
1
4
3
2
1
T
Peak pulse power as a function of exponential
pulse duration; typical values
amb
= 25 C
10
Table 8.
T
[1]
[2]
Symbol
C
V
r
amb
dif
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4 or 6 to 2 or 5
10
= 25 C unless otherwise specified
2
Parameter
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
10
3
006aaa698
t
p
( s)
10
Rev. 02 — 21 August 2009
Quadruple ESD protection diode arrays in a SOT457 package
4
…continued
Fig 4.
P
Conditions
f = 1 MHz; V
I
I
I
I
I
I
I
I
I
I
I
PP(25 C)
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
R
P
= 5 mA
PP
= 1 A
= 20 A
= 1 A
= 20 A
= 1 A
= 10 A
= 1 A
= 6 A
= 1 A
= 4 A
1.2
0.8
0.4
0
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
R
PESDxS4UD series
= 0 V
50
[1][2]
100
-
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
150
Typ
215
165
73
60
45
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
001aaa633
T
j
( C)
Max
300
220
100
90
70
8
12
8
13
17
24
22
33
33
52
25
200
Unit
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
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