PESD5V0L6US,118 NXP Semiconductors, PESD5V0L6US,118 Datasheet - Page 10

DIODE 6FOLD ESD PROTECT 8-SOIC

PESD5V0L6US,118

Manufacturer Part Number
PESD5V0L6US,118
Description
DIODE 6FOLD ESD PROTECT 8-SOIC
Manufacturer
NXP Semiconductors
Type
TVSr
Series
-r
Datasheet

Specifications of PESD5V0L6US,118

Package / Case
8-SOIC (3.9mm Width)
Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
6.8V
Power (watts)
35W
Polarization
6 Channel Array - Bidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
15 V
Operating Voltage
5 V
Breakdown Voltage
6.4 V
Peak Surge Current
2.5 A
Peak Pulse Power Dissipation
35 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
4(Max) mm W x 5(Max) mm L
Number Of Elements
6
Package Type
SO
Operating Temperature Classification
Military
Reverse Breakdown Voltage
6.4V
Reverse Stand-off Voltage
5V
Leakage Current (max)
25nA
Peak Pulse Current
2.5A
Test Current (it)
1mA
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Pin Count
8
Capacitance Value
19 pF
Maximum Clamping Voltage
15 V
Direction Type
Uni-Directional
Number Of Elements Per Chip
6
Esd Protection Voltage
10@HBM|20@Contact Disc KV
Maximum Leakage Current
0.025 uA
Maximum Working Voltage
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4520-2
934057934118
PESD5V0L6US /T3
PESD5V0L6US /T3
NXP Semiconductors
Fig 10. Package outline SOT96-1 (SO8/MS-012)
PESD5V0L6UAS_US_3
Product data sheet
SO8: plastic small outline package; 8 leads; body width 3.9 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
inches
UNIT
mm
VERSION
OUTLINE
SOT96-1
0.069
max.
1.75
A
0.010
0.004
0.25
0.10
A
1
0.057
0.049
1.45
1.25
A
076E03
2
IEC
1
8
Z
pin 1 index
0.25
0.01
A
y
3
e
0.019
0.014
0.49
0.36
b
p
D
0.0100
0.0075
0.25
0.19
MS-012
JEDEC
c
PESD5V0L6UAS; PESD5V0L6US
b
REFERENCES
0.20
0.19
p
D
5.0
4.8
Rev. 03 — 18 August 2009
5
4
0
(1)
w
0.16
0.15
E
4.0
3.8
(2)
M
JEITA
scale
1.27
0.05
2.5
c
e
Low capacitance 6-fold ESD protection diode arrays
A
0.244
0.228
2
H
6.2
5.8
A
E
1
0.041
1.05
5 mm
L
H
0.039
0.016
E
E
1.0
0.4
detail X
L
p
0.028
0.024
L
L
0.7
0.6
Q
p
Q
PROJECTION
(A )
EUROPEAN
0.25
0.01
3
A
v
0.25
0.01
A
w
v
X
M
0.004
A
0.1
© NXP B.V. 2009. All rights reserved.
y
ISSUE DATE
99-12-27
03-02-18
0.028
0.012
Z
0.7
0.3
(1)
SOT96-1
8
0
o
o
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