PESD5V0L6US,118 NXP Semiconductors, PESD5V0L6US,118 Datasheet - Page 9

• Manufacturer Part Number: PESD5V0L6US,118
• Description: DIODE 6FOLD ESD PROTECT 8-SOIC
• Manufacturer: NXP Semiconductors
• Type: TVSr
• Series: -r

Specifications of PESD5V0L6US,118

• Package / Case: 8-SOIC (3.9mm Width)
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6.8V
• Power (watts): 35W
• Polarization: 6 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 15 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6.4 V
• Peak Surge Current: 2.5 A
• Peak Pulse Power Dissipation: 35 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 4(Max) mm W x 5(Max) mm L
• Number Of Elements: 6
• Package Type: SO
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 6.4V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 25nA
• Peak Pulse Current: 2.5A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 8
• Capacitance Value: 19 pF
• Maximum Clamping Voltage: 15 V
• Direction Type: Uni-Directional
• Number Of Elements Per Chip: 6
• Esd Protection Voltage: 10@HBM|20@Contact Disc KV
• Maximum Leakage Current: 0.025 uA
• Maximum Working Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4520-2; 934057934118; PESD5V0L6US /T3; PESD5V0L6US /T3

NXP Semiconductors
8. Package outline
Fig 9.
PESD5V0L6UAS_US_3
Product data sheet
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
UNIT
mm
Package outline SOT505-1 (TSSOP8)
VERSION
OUTLINE
SOT505-1
max.
1.1
A
0.15
0.05
A 1
1
0.95
0.80
8
A 2
y
pin 1 index
IEC
e
Z
0.25
A 3
D
0.45
0.25
b p
b p
5
4
0.28
0.15
JEDEC
c
0
w
PESD5V0L6UAS; PESD5V0L6US
REFERENCES
M
D
3.1
2.9
Rev. 03 — 18 August 2009
(1)
E
3.1
2.9
(2)
c
JEITA
scale
0.65
2.5
A 2
e
Low capacitance 6-fold ESD protection diode arrays
A 1
H E
5.1
4.7
0.94
L
5 mm
H E
E
detail X
0.7
0.4
L p
L
0.1
v
L p
PROJECTION
EUROPEAN
0.1
A
w
(A 3 )
0.1
X
y
v
A
M
0.70
0.35
Z
© NXP B.V. 2009. All rights reserved.
A
(1)
ISSUE DATE
99-04-09
03-02-18
6
0
SOT505-1
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