ESDA6V1-4BC6 STMicroelectronics, ESDA6V1-4BC6 Datasheet - Page 3
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ESDA6V1-4BC6
Manufacturer Part Number
ESDA6V1-4BC6
Description
TRANSIL QD BIDIR ESD SOT23-6
Manufacturer
STMicroelectronics
Series
TRANSIL™r
Datasheet
1.ESDA6V1-4BC6.pdf
(6 pages)
Specifications of ESDA6V1-4BC6
Voltage - Reverse Standoff (typ)
3V
Voltage - Breakdown
6.1V
Power (watts)
80W
Polarization
4 Channel Array - Bidirectional
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Polarity
Bidirectional
Channels
4 Channels
Operating Voltage
3 V
Breakdown Voltage
6.1 V
Termination Style
SMD/SMT
Peak Pulse Power Dissipation
80 W
Capacitance
45 pF
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Dimensions
1.75 mm W x 3.05 mm L x 1.45 mm H
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4643-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ESDA6V1-4BC6
Manufacturer:
STMicroelectronics
Quantity:
50 917
Part Number:
ESDA6V1-4BC6
Manufacturer:
ST
Quantity:
20 000
Figure 4: Clamping voltage versus peak pulse
current (typical values, rectangular waveform)
Figure 6: Relative variation of leakage current
versus junction temperature (typical values)
1. ESD protection by ESDA6V1-4BC6
With the focus of lowering the operation levels, the problem of malfunction caused by the environment is
critical. Electrostatic discharge (ESD) is a major cause of failure in electronic system.
Transient Voltage Suppressors are an ideal choice for ESD protection and have proven capable in sup-
pressing ESD events. They are capable of clamping the incoming transient to a low enough level such
that damage to the protected semiconductor is prevented.
Surface mount TVS arrays offer the best choice for minimal lead inductance.
They serve as parallel protection elements, connected between the signal line to ground. As the transient
rises above the operating voltage of the device, the TVS array becomes a low impedance path diverting
the transient current to ground.
100.0
100
10.0
10
1.0
0.1
1
25
I [T ] / I [T =25°C]
R
0
®
I
PP
j
(A)
5
R
j
10
50
15
20
T (°C)
V
j
CL
75
25
(V)
30
35
100
40
T
j
initial = 25°C
t = 2.5µs
p
45
125
50
Figure 5: Junction capacitance versus line
voltage applied (typical values
Figure 7: Analog crosstalk test configuration
50
45
40
35
30
25
20
15
10
5
0
0
C(pF)
V
G
1
Port 1
50
2
V (V)
R
3
I/O1
I/O6
ESDA6V1-4BC6
4
unloaded
GND
Port 2
50
V
OSC
F = 1MHz
T
5
j
= 25°C
= 30mV
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