PESD5V0S1BB,115 NXP Semiconductors, PESD5V0S1BB,115 Datasheet - Page 5

• Manufacturer Part Number: PESD5V0S1BB,115
• Description: DIODE BIDIR ESD PROTECT SOD523
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0S1BB,115

• Package / Case: SC-79, SOD-523
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.5V
• Power (watts): 130W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 14 V
• Operating Voltage: 5 V
• Breakdown Voltage: 9.5 V
• Termination Style: SMD/SMT
• Peak Surge Current: 12 A
• Peak Pulse Power Dissipation: 130 W
• Capacitance: 35 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 0.85(Max) mm W x 1.25(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4054-2; 934058005115; PESD5V0S1BB T/R; PESD5V0S1BB T/R

NXP Semiconductors
6. Characteristics
Table 9.
T
[1]
[2]
PESD5V0S1BA_BB_BL_4
Product data sheet
Symbol
Per diode
V
I
V
V
r
C
RM
dif
amb
RWM
(CL)R
(BR)
d
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5; see
Measures from pin 1 to pin 2.
= 25 C unless otherwise specified
Characteristics
Parameter
reverse stand-off voltage
reverse leakage current
clamping voltage
breakdown voltage
differential resistance
diode capacitance
Conditions
V
see
I
I
I
I
V
see
PP
PP
R
R
RWM
R
= 1 mA
= 1 mA
= 0 V; f = 1 MHz;
= 1 A
= 12 A
Figure 6
Figure 5
= 5 V;
Rev. 04 — 20 August 2009
Low capacitance bidirectional ESD protection diodes
PESD5V0S1BA/BB/BL
[1][2]
[1][2]
Min
-
-
-
-
5.5
-
-
Typ
-
5
-
-
-
-
35
Figure
1.
Max
5
100
10
14
9.5
50
45
© NXP B.V. 2009. All rights reserved.
Unit
V
nA
V
V
V
pF
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