PESD5V0S1BB,115 NXP Semiconductors, PESD5V0S1BB,115 Datasheet - Page 6

• Manufacturer Part Number: PESD5V0S1BB,115
• Description: DIODE BIDIR ESD PROTECT SOD523
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0S1BB,115

• Package / Case: SC-79, SOD-523
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.5V
• Power (watts): 130W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 14 V
• Operating Voltage: 5 V
• Breakdown Voltage: 9.5 V
• Termination Style: SMD/SMT
• Peak Surge Current: 12 A
• Peak Pulse Power Dissipation: 130 W
• Capacitance: 35 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 0.85(Max) mm W x 1.25(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4054-2; 934058005115; PESD5V0S1BB T/R; PESD5V0S1BB T/R

NXP Semiconductors
PESD5V0S1BA_BB_BL_4
Product data sheet
Fig 3.
Fig 5.
(pF)
P
(W)
C
pp
10
10
d
10
38
34
30
26
22
3
2
1
0
T
Peak pulse power dissipation as a function of
exponential time duration t
T
Diode capacitance as a function of reverse
voltage; typical values
amb
amb
= 25 C
= 25 C; f = 1 MHz
1
10
2
10
2
3
p
10
; typical values
3
4
001aaa202
t
001aaa203
p
V
( s)
R
(V)
10
Rev. 04 — 20 August 2009
5
4
Low capacitance bidirectional ESD protection diodes
Fig 4.
Fig 6.
I
RM(T j =85 C)
P
PP(25 C)
I
P
RM(T j )
PP
10
10
1.2
0.8
0.4
10
1
0
2
1
PESD5V0S1BA/BB/BL
75
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
50
100
100
125
150
© NXP B.V. 2009. All rights reserved.
T
j
001aaa193
T
001aaa204
( C)
j
( C)
200
150
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