TV04A171JB-G Comchip Technology, TV04A171JB-G Datasheet - Page 31
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TV04A171JB-G
Manufacturer Part Number
TV04A171JB-G
Description
TVS 400W 170V BIDIRECT SMA
Manufacturer
Comchip Technology
Specifications of TV04A171JB-G
Voltage - Reverse Standoff (typ)
170V
Voltage - Breakdown
189V
Power (watts)
400W
Polarization
Bidirectional
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Channels
1 Channel
Clamping Voltage
275 V
Operating Voltage
3.5 V
Breakdown Voltage
189 V
Peak Surge Current
40 A
Peak Pulse Power Dissipation
400 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
10.8
10.9
February 23, 2010 S29AL008J_00_09
Sector Erase Command Sequence
Erase Suspend/Erase Resume Commands
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector erase command.
address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram the memory prior to erase. The Embedded Erase
algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase.
The system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase commands may be written. However, these additional erase
commands are only one bus cycle long and should be identical to the sixth cycle of the standard erase
command explained above. Loading the sector erase buffer may be done in any sequence, and the number
of sectors may be from one sector to all sectors. The time between these additional cycles must be less than
50 µs, otherwise the last address and command might not be accepted, and erasure may begin. It is
recommended that processor interrupts be disabled during this time to ensure all commands are accepted.
The interrupts can be re-enabled after the last Sector Erase command is written. If the time between
additional sector erase commands can be assumed to be less than 50 µs, the system need not monitor DQ3.
Any command other than Sector Erase or Erase Suspend during the time-out period resets the device
to reading array data. The system must rewrite the command sequence and any additional sector
addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out. (See
Timer on page
sequence.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored. Note that a hardware reset during the sector erase operation immediately terminates the
operation. The Sector Erase command sequence should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses
are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. (Refer to
Figure 10.2 on page 32
on page 45
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase
Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm.
Writing the Erase Suspend command during the Sector Erase time-out immediately terminates the time-out
period and suspends the erase operation. Addresses are don’t-cares when writing the Erase Suspend
command.
When the Erase Suspend command is written during a sector erase operation, the device requires a
maximum of 35 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation.
After the erase operation has been suspended, the system can read array data from or program data to any
sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Normal read
and write timings and command definitions apply. Reading at any address within erase-suspended sectors
produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a
sector is actively erasing or is erase-suspended. See
these status bits.
After an erase-suspended program operation is complete, the system can once again read array data within
non-suspended sectors. The system can determine the status of the program operation using the DQ7 or
for parameters, and to
38.) The time-out begins from the rising edge of the final WE# pulse in the command
Write Operation Status on page 34
illustrates the algorithm for the erase operation. Refer to
D a t a
Figure 17.6 on page 46
S h e e t
S29AL008J
Write Operation Status on page 34
for information on these status bits.)
for timing diagrams.
Table 10.1 on page 33
Erase/Program Operations
DQ3: Sector Erase
for information on
shows the
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