AT91SAM7XC256B-CU Atmel, AT91SAM7XC256B-CU Datasheet - Page 18
![MCU ARM 256K HS FLASH 100-TFBGA](/photos/6/89/68968/313-100-cbga_sml.jpg)
AT91SAM7XC256B-CU
Manufacturer Part Number
AT91SAM7XC256B-CU
Description
MCU ARM 256K HS FLASH 100-TFBGA
Manufacturer
Atmel
Series
AT91SAMr
Datasheet
1.AT91SAM7XC128B-CU.pdf
(47 pages)
Specifications of AT91SAM7XC256B-CU
Core Processor
ARM7
Core Size
16/32-Bit
Speed
55MHz
Connectivity
CAN, Ethernet, I²C, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Number Of I /o
62
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TFBGA
Processor Series
91S
Core
ARM7TDMI
Data Bus Width
32 bit
Data Ram Size
64 KB
Interface Type
CAN, Ethernet, SPI, TWI, USART, USB
Maximum Clock Frequency
55 MHz
Number Of Programmable I/os
62
Number Of Timers
3
Operating Supply Voltage
3.3 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Temperature Range
- 40 C to + 85 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
8. Memory
8.1
8.2
8.3
18
AT91SAM7XC512
AT91SAM7XC256
AT91SAM7XC128
AT91SAM7XC512/256/128 Preliminary
• 512 Kbytes of dual-plane Flash Memory
• 128 Kbytes of Fast SRAM
• 256 Kbytes of Flash Memory
• 64 Kbytes of Fast SRAM
• 128 Kbytes of Flash Memory
• 32 Kbytes of Fast SRAM
– 2 contiguous banks of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 32 lock bits, protecting 32 sectors of 64 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
– 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 16 lock bits, each protecting 16 sectors of 64 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
– 512 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 8 lock bits, each protecting 8 sectors of 64 pages
– Protection Mode to secure contents of the Flash
– Single-cycle access at full speed
6209DS–ATARM–17-Feb-09