MC9S08AC8CFGE Freescale Semiconductor, MC9S08AC8CFGE Datasheet - Page 317

IC MCU 8BIT 8K FLASH 44-LQFP

MC9S08AC8CFGE

Manufacturer Part Number
MC9S08AC8CFGE
Description
IC MCU 8BIT 8K FLASH 44-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet

Specifications of MC9S08AC8CFGE

Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
34
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-LQFP
Processor Series
S08AC
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
700 B
Interface Type
I2C, SCI, SPI
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
34
Number Of Timers
3
Operating Supply Voltage
- 0.3 V to + 5.8 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08AC60E, DEMOACEX, DEMOACKIT, DCF51AC256, DC9S08AC128, DC9S08AC16, DC9S08AC60, DEMO51AC256KIT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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0
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
A.13 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
Freescale Semiconductor
1
2
3
4
5
Num
Typical values are based on characterization data at V
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information
on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619, Typical
Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
10
1
2
4
6
8
3
5
7
9
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
= –40°C to + 125°C
Characteristic
5
3
(2)
MC9S08AC16 Series Data Sheet, Rev. 8
Table A-15. FLASH Characteristics
2
4
(2)
(2)
DD
V
= 5.0 V, 25°C unless otherwise stated.
Symbol
Appendix A Electrical Characteristics and Timing Specifications
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Page
Mass
D_ret
Fcyc
prog
Read
10,000
Min
150
2.7
2.7
Chapter 4,
15
5
20,000
4000
100,000
Typ
9
4
100
“Memory.”
1
Max
6.67
200
5.5
5.5
cycles
DD
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
supply.
317

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