MC9S08QE32CFT Freescale Semiconductor, MC9S08QE32CFT Datasheet - Page 29

• Manufacturer Part Number: MC9S08QE32CFT
• Description: MCU 8BIT 32K FLASH 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08QE32CFT

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 50MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-QFN
• Cpu Family: HCS08
• Device Core Size: 8b
• Interface Type: SCI/SPI
• # I/os (max): 40
• Operating Supply Voltage (typ): 3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 2V
• On-chip Adc: 10-chx12-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 48
• Package Type: QFN EP
• Processor Series: S08QE
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Number Of Programmable I/os: 40
• Operating Supply Voltage: - 0.3 V to + 3.8 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMOQE128, EVBQE128
• Minimum Operating Temperature: - 40 C
• For Use With: DEMO9S08QE32 - DEMO FOR S08 AND QE32/16DC9S08QE32 - DAUGHTER CARD FOR DEMO9S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

3.13
This section provides details about program/erase times and program-erase endurance for flash memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see MC9S08QE32 Series Reference
Manual Chapter 4 Memory.
Freescale Semiconductor
1
2
3
4
1
2
3
4
5
Typical values assume V
only and are not tested in production.
1 LSB = (V
Monotonicity and No-missing-codes guaranteed in 10-bit and 8-bit modes
Based on input pad leakage current. Refer to pad electricals.
These values are hardware state machine controlled. User code does not need to count cycles. This information is
supplied for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
with V
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
The frequency of this clock is controlled by software setting.
C
D
D
D
D
P
P
P
P
C
C
DD
Flash Specifications
Supply voltage for program/erase
–40 °C to 85 °C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
REFH
= 3.0 V, bus frequency = 4.0 MHz.
T
T = 25 °C
L
to T
– V
H
REFL
= –40 °C to 85 °C
Characteristic
5
DDAD
)/2
2
(2)
N
3
= 3.0 V, Temp = 25 °C, f
3
1
4
MC9S08QE32 Series MCU Data Sheet, Rev. 6
(2)
Table 18. Flash Characteristics
(2)
ADCK
V
Symbol
prog/erase
R
R
V
f
= 1.0 MHz unless otherwise stated. Typical values are for reference
t
t
t
t
t
t
FCLK
IDDBP
IDDPE
D_ret
Burst
Page
Mass
Fcyc
Read
prog
DD
10,000
. These values are measured at room temperatures
Min
150
1.8
1.8
—
—
15
5
100,000
Typical
20,000
4000
100
—
—
—
—
—
9
4
4
6
Electrical Characteristics
Max
6.67
200
3.6
3.6
—
—
—
—
—
DD
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
supply.
29