R5F21191SP#U0 Renesas Electronics America, R5F21191SP#U0 Datasheet - Page 27

• Manufacturer Part Number: R5F21191SP#U0
• Description: IC R8C MCU FLASH 8K 20SSOP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/R8C/Tiny/19r

Specifications of R5F21191SP#U0

• Core Processor: R8C
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SIO, UART/USART
• Peripherals: LED, POR, Voltage Detect, WDT
• Number Of I /o: 13
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 4x1b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 20-SSOP
• For Use With: R0K521134S000BE - KIT EVAL STARTER FOR R8C/13R0E521174CPE10 - EMULATOR COMPACT R8C/18/19/1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R8C/18 Group, R8C/19 Group
Rev.1.40
REJ03B0124-0140
Figure 5.2
Table 5.5
NOTES:
−
−
−
−
−
t
−
−
−
−
−
−
−
d(SR-SUS)
(Maskable interrupt request)
Symbol
1. V
2. Definition of programming/erasure endurance
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. If emergency processing is required, a suspend request can be generated independent of this characteristic. In that case the
5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
7. Customers desiring programming/erasure failure rate information should contact their Renesas technical support
8.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one. However, the same address must not be programmed more than once per erase operation (overwriting
prohibited).
normal time delay to suspend can be applied to the request. However, we recommend that a suspend request with an interval
of less than 650 µs is only used once because, if the suspend state continues, erasure cannot operate and the incidence of
erasure error rises.
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
command at least three times until the erase error does not occur.
representative.
-40 °C for D version.
CC
Apr 14, 2006
= 2.7 to 5.5 V at T
Program/erase endurance
Byte program time
(Program/erase endurance ≤ 1,000 times)
Byte program time
(Program/erase endurance > 1,000 times)
Block erase time
(Program/erase endurance ≤ 1,000 times)
Block erase time
(Program/erase endurance > 1,000 times)
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Suspend request
Flash Memory (Data flash Block A, Block B) Electrical Characteristics
Transition Time to Suspend
FMR46
(9)
Page 25 of 38
Parameter
opr
= -20 to 85 °C / -40 to 85 °C, unless otherwise specified.
(2)
Ambient temperature = 55 °C
Fixed time (97 µs)
Conditions
t
d(SR-SUS)
10,000
-20
Min.
650
Clock-dependent
2.7
2.7
20
−
−
−
−
−
0
−
(8)
(3)
time
5. Electrical Characteristics
Standard
Typ.
0.2
0.3
50
65
−
−
−
−
−
−
−
−
−
97+CPU clock
3+CPU clock
× 6 cycles
× 4 cycles
Access restart
Max.
400
5.5
5.5
85
−
−
9
−
−
−
−
times
year
Unit
µs
µs
µs
µs
ns
µs
°C
V
V
s
s