ATTINY2313V-10MUR Atmel, ATTINY2313V-10MUR Datasheet - Page 20
![MCU AVR 2KB FLASH 10MHZ 20QFN](/photos/6/87/68751/313-20-qfn_sml.jpg)
ATTINY2313V-10MUR
Manufacturer Part Number
ATTINY2313V-10MUR
Description
MCU AVR 2KB FLASH 10MHZ 20QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY2313V-10MUR
Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
18
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data Converters
-
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Preventing EEPROM
Corruption
I/O Memory
20
ATtiny2313
The next code examples show assembly and C functions for reading the EEPROM. The exam-
ples assume that interrupts are controlled so that no interrupts will occur during execution of
these functions.
During periods of low V
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First,
a regular write sequence to the EEPROM requires a minimum voltage to operate correctly. Sec-
ondly, the CPU itself can execute instructions incorrectly, if the supply voltage is too low.
EEPROM data corruption can easily be avoided by following this design recommendation:
Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can
be done by enabling the internal Brown-out Detector (BOD). If the detection level of the internal
BOD does not match the needed detection level, an external low V
be used. If a reset occurs while a write operation is in progress, the write operation will be com-
pleted provided that the power supply voltage is sufficient.
The I/O space definition of the ATtiny2313 is shown in
All ATtiny2313 I/Os and peripherals are placed in the I/O space. All I/O locations may be
accessed by the LD/LDS/LDD and ST/STS/STD instructions, transferring data between the 32
Assembly Code Example
C Code Example
EEPROM_read:
unsigned char EEPROM_read(unsigned int uiAddress)
{
}
; Wait for completion of previous write
sbic EECR,EEPE
rjmp EEPROM_read
; Set up address (r17) in address register
out EEAR, r17
; Start eeprom read by writing EERE
sbi EECR,EERE
; Read data from data register
in
ret
/* Wait for completion of previous write */
while(EECR & (1<<EEPE))
/* Set up address register */
EEAR = uiAddress;
/* Start eeprom read by writing EERE */
EECR |= (1<<EERE);
/* Return data from data register */
return EEDR;
;
r16,EEDR
CC,
the EEPROM data can be corrupted because the supply voltage is
“Register Summary” on page
CC
reset Protection circuit can
2543L–AVR–08/10
211.
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