ATA6616-P3QW Atmel, ATA6616-P3QW Datasheet - Page 255

• Manufacturer Part Number: ATA6616-P3QW
• Description: TXRX MULTICHIP MOD LIN SIP 38QFN
• Manufacturer: Atmel
• Series: AVR® ATA66 LIN-SBCr

Specifications of ATA6616-P3QW

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, LIN, SPI, UART/USART, USI
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 16
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 38-VQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4.22.7
4.22.7.1
4.22.7.2
4.22.7.3
9132D–AUTO–12/10
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
Table 4-77.
The following algorithm puts the device in parallel programming mode:
The loaded command and address are retained in the device during programming. For effi-
cient programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
bits are not reset until the program memory has been completely erased. The Fuse bits are
not changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
1. Apply 4.5 - 5.5V between Vcc and GND.
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100ns after
5. Wait at least 50 µs before sending a new command.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
Command Byte
least 100 ns.
+12V has been applied to RESET, will cause the device to fail entering programming
mode.
1000 0000
0100 0000
0010 0000
0001 0000
0001 0001
0000 1000
0000 0100
0000 0010
0000 0011
The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
Command Byte Bit Coding
b
b
b
b
b
b
b
b
b
Command Executed
Chip Erase
Write Fuse bits
Write Lock bits
Write Flash
Write EEPROM
Read Signature bytes and Calibration byte
Read Fuse and Lock bits
Read Flash
Read EEPROM
Table 4-75 on page 254
Atmel ATA6616/ATA6617
(Note:)
memories plus Lock bits. The Lock
to “0000
b
” and wait at
255