STM32F103C6U6A STMicroelectronics, STM32F103C6U6A Datasheet - Page 52

• Manufacturer Part Number: STM32F103C6U6A
• Description: MCU 32BIT ARM 32K FLASH 48-QFN
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32F103C6U6A

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
• Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
• Number Of I /o: 37
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 10K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Processor Series: STM32F103x
• Core: ARM Cortex M3
• Data Bus Width: 32 bit
• Data Ram Size: 10 KB
• Interface Type: CAN, I2C, SPI, USART
• Maximum Clock Frequency: 72 MHz
• Number Of Programmable I/os: 37
• Number Of Timers: 6
• Operating Supply Voltage: 2 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 10 Channel
• For Use With: 497-10030 - STARTER KIT FOR STM32497-8511 - KIT STARTER FOR STM32 512K FLASH497-6438 - BOARD EVALUTION FOR STM32 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Electrical characteristics
5.3.10
52/87
Table 28.
1. Guaranteed by design, not tested in production.
Table 29.
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Symbol
Symbol
N
V
t
I
RET
DD
prog
END
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Supply current
Programming voltage
Endurance
Data retention
Parameter
Flash memory characteristics (continued)
Flash memory endurance and data retention
Parameter
T
T
1 kcycle
1 kcycle
10 kcycles
A
A
= –40 to +105 °C (7 suffix versions)
Table
= –40 to +85 °C (6 suffix versions)
Doc ID 15060 Rev 5
(2)
(2)
Read mode
f
states, V
Write / Erase modes
f
Power-down mode / Halt,
V
30. They are based on the EMS levels and classes
HCLK
HCLK
DD
(2)
at T
at T
at T
Conditions
= 3.0 to 3.6 V
A
A
= 72 MHz with 2 wait
= 72 MHz, V
= 85 °C
= 105 °C
A
DD
Conditions
= 55 °C
= 3.3 V
DD
= 3.3 V
STM32F103x4, STM32F103x6
Min
Min
30
10
20
10
2
(1)
(1)
Value
Typ
Typ
Max
Max
3.6
20
50
5
(1)
DD
kcycles
and
Years
Unit
Unit
mA
mA
µA
V