STM32F103C6U6A STMicroelectronics, STM32F103C6U6A Datasheet - Page 53

• Manufacturer Part Number: STM32F103C6U6A
• Description: MCU 32BIT ARM 32K FLASH 48-QFN
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32F103C6U6A

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
• Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
• Number Of I /o: 37
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 10K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Processor Series: STM32F103x
• Core: ARM Cortex M3
• Data Bus Width: 32 bit
• Data Ram Size: 10 KB
• Interface Type: CAN, I2C, SPI, USART
• Maximum Clock Frequency: 72 MHz
• Number Of Programmable I/os: 37
• Number Of Timers: 6
• Operating Supply Voltage: 2 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 10 Channel
• For Use With: 497-10030 - STARTER KIT FOR STM32497-8511 - KIT STARTER FOR STM32 512K FLASH497-6438 - BOARD EVALUTION FOR STM32 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

STM32F103x4, STM32F103x6
Table 30.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●
●
●
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 31.
V
V
Symbol
Symbol Parameter
FESD
EFTB
S
EMI
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
Peak level V
EMS characteristics
EMI characteristics
DD
Parameter
= 3.3 V, T
Conditions
Doc ID 15060 Rev 5
A
DD
= 25 °C
and V
SS
130 MHz to 1GHz
frequency band
SAE EMI Level
30 to 130 MHz
0.1 to 30 MHz
Monitored
V
f
conforms to IEC 61000-4-2
V
f
conforms to IEC 61000-4-4
HCLK
HCLK
DD
DD
= 3.3 V, T
= 3.3 V, T
= 72 MHz
= 72 MHz
Conditions
A
A
Max vs. [f
8/48 MHz 8/72 MHz
Electrical characteristics
= +25 °C,
= +25 °C,
12
22
23
4
HSE
/f
12
19
29
HCLK
4
]
Level/
Class
dBµV
Unit
2B
4A
53/87
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