MC9S08QG84CDNE Freescale Semiconductor, MC9S08QG84CDNE Datasheet - Page 274

• Manufacturer Part Number: MC9S08QG84CDNE
• Description: IC MCU 8BIT B54 RATING 8-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08QG84CDNE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 4
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: I2C, SCI, SPI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 12
• Number Of Timers: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• For Use With: DEMO9S08QG8E - BOARD DEMO FOR MC9S08QG8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Appendix A Electrical Characteristics
A.6
This section includes information about power supply current in various operating modes.
272
Run supply current
Run supply current
Wait mode supply current
Stop1 mode supply current
Stop2 mode supply current
Stop3 mode supply current
1.2
0.8
0.6
0.4
0.2
f
f
Bus
Bus
1
0
0.8
0.6
0.4
0.2
0
0
= 8 MHz
= 1 MHz
0
Supply Current Characteristics
–40°C
85°C
25°C
Figure A-5. Typical High-Side (Source) Characteristics
Figure A-4. Typical High-Side (Source) Characteristics
–40°C
85°C
25°C
–5
TYPICAL V
–5
TYPICAL V
3
3
measured in FBE mode at
measured in FBE mode at
Parameter
–10
DD
DD
4
– V
measured in FBE at 8 MHz
– V
I
OH
–10
OH
OH
(mA))
VS I
VS I
–15
I
OH
OH
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 5
OH
Table A-7. Supply Current Characteristics
(mA)
AT V
AT V
DD
DD
–20
–15
= 3.0 V
= 3.0 V
–25
–20
–30
Symbol
S1I
S2I
S3I
WI
RI
RI
DD
DD
DD
DD
DD
DD
0.25
0.15
0.05
0.2
0.1
0.4
0.3
0.2
0.1
0
1
0
1
V
DD
TYPICAL V
3
2
3
2
3
3
2
3
2
3
2
(V)
—
—
–40°C
TYPICAL V
85°C
25°C
1
High Drive (PTxDSn = 1)
Low Drive (PTxDSn = 0)
I
OH
2
DD
= –3 mA
2
Typical
– V
3.5 mA
2.5 mA
490 μA
370 μA
475 nA
470 nA
600 nA
550 nA
750 nA
680 nA
DD
1mA
OH
– V
V
DD
VS V
OH
V
DD
(V)
2
VS V
I
OH
(V)
DD
= –6 mA
AT SPEC I
3
DD
–40°C,
85°C,
25°C,
Freescale Semiconductor
AT SPEC I
3
1.5mA
1.2μA
15 μA
35 μA
10μA
5mA
1mA
2 μA
6 μA
Max
—
—
—
—
—
I
I
OH
OH
I
OH
OH
= 2 mA
= 2 mA
= 2 mA
OH
I
OH
4
= –10 mA
T (°C)
4
125
125
125
125
125
125
125
125
85
85
85
85
85
85