MC9S08JS8LCWJ Freescale Semiconductor, MC9S08JS8LCWJ Datasheet - Page 8
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MC9S08JS8LCWJ
Manufacturer Part Number
MC9S08JS8LCWJ
Description
MCU 8BIT 8K FLASH 20-SOIC
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.DEMO9S08JS16.pdf
(32 pages)
Specifications of MC9S08JS8LCWJ
Core Processor
HCS08
Core Size
8-Bit
Speed
48MHz
Connectivity
LIN, SCI, SPI, USB
Peripherals
LVD, POR, PWM
Number Of I /o
14
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-SOIC (7.5mm Width)
Processor Series
S08JS
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
512 KB
Interface Type
SCI, SPI
Maximum Clock Frequency
48 MHz
Number Of Timers
1
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08JS16
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08JS8LCWJ
Manufacturer:
Freescale Semiconductor
Quantity:
135
Electrical Characteristics
P
P
For most applications, P
(if P
Solving
where K is a constant pertaining to the particular part. K can be determined from
P
solving
3.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions must be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. This device was qualified to AEC-Q100 Rev E. A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete DC parametric and functional testing is performed per the applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the
device specification.
3.5
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
8
ESD Target for Machine Model (MM) — MM circuit
description
ESD Target for Human Body Model (HBM) — HBM
circuit description
D
I/O
D
Num C
1
= P
(at equilibrium) for a known T
I/O
= Power dissipation on input and output pins — user determined
int
is neglected) is:
Equation 1
Equation 1
+ P
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
Operating voltage
I/O
P
int
Parameter
and
= I
and
DD
Equation 2
I/O
Equation 2
2
× V
<< P
Parameter
DD
int
K = P
, Watts — chip internal power
MC9S08JS16 Series MCU Data Sheet, Rev. 4
Table 5. ESD Protection Characteristics
A
and can be neglected. An approximate relationship between P
iteratively for any value of T
. Using this value of K, the values of P
for K gives:
D
P
Table 6. DC Characteristics
× (T
D
= K ÷ (T
A
+ 273°C) + θ
Symbol
V
V
THHBM
THMM
J
+ 273°C)
JA
Symbol
× (P
—
D
A
)
2
.
Min
2.7
Value
2000
200
D
and T
Typical
Equation 3
—
J
can be obtained by
Freescale Semiconductor
1
Max
by measuring
5.5
D
Unit
and T
V
V
Eqn. 2
Eqn. 3
Unit
V
J