MC908GR16AVFAER Freescale Semiconductor, MC908GR16AVFAER Datasheet - Page 38
![no-image](/images/manufacturer_photos/0/2/262/freescale_semiconductor_sml.jpg)
MC908GR16AVFAER
Manufacturer Part Number
MC908GR16AVFAER
Description
IC MCU 8BIT 16K FLASH 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC908GR16ACFAE.pdf
(270 pages)
Specifications of MC908GR16AVFAER
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
LIN, SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
37
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
48-LQFP
Controller Family/series
HC08
No. Of I/o's
37
Ram Memory Size
1KB
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
SCI, SPI
Rohs Compliant
Yes
Processor Series
HC08GR
Core
HC08
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
ESCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
37
Number Of Timers
4
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, DEMO908GZ60E, M68CBL05CE, M68EML08GPGTE
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC908GR16AVFAER
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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Memory
2.6.2 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
1. No security feature is absolutely secure. However, Freescale’s strategy is to make reading or copying the FLASH difficult for
38
unauthorized users.
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
Setting this read/write bit configures the 16-Kbyte FLASH array for mass erase operation.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = MASS erase operation selected
0 = PAGE erase operation selected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
Address:
Reset:
Read:
Write:
$FE08
Bit 7
0
0
Figure 2-3. FLASH Control Register (FLCR)
= Unimplemented
6
0
0
MC68HC908GR16A Data Sheet, Rev. 1.0
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
1
0
Freescale Semiconductor
PGM
Bit 0
0
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