MCF51JM128VLD Freescale Semiconductor, MCF51JM128VLD Datasheet - Page 17

IC MCU 128/16K FLASH/SRAM 44LQFP

MCF51JM128VLD

Manufacturer Part Number
MCF51JM128VLD
Description
IC MCU 128/16K FLASH/SRAM 44LQFP
Manufacturer
Freescale Semiconductor
Series
MCF51JMr
Datasheets

Specifications of MCF51JM128VLD

Core Processor
Coldfire V1
Core Size
32-Bit
Speed
50MHz
Connectivity
CAN, I²C, SCI, SPI, USB OTG
Peripherals
LVD, PWM, WDT
Number Of I /o
33
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 105°C
Package / Case
44-LQFP
Processor Series
MCF51JM
Core
ColdFire V1
Data Bus Width
32 bit
Data Ram Size
16 KB
Interface Type
SCI/SPI
Maximum Clock Frequency
50.33 MHz
Number Of Programmable I/os
33
Number Of Timers
9
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
3rd Party Development Tools
JLINK-CF-BDM26, EWCF
Development Tools By Supplier
DEMOJM, DEMOFLEXISJMSD, EVB51JM128
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 12-bit
Package
44LQFP
Device Core
ColdFire
Family Name
MCF51JM
Maximum Speed
50.33 MHz
Operating Supply Voltage
3.3|5 V
For Use With
EVB51JM128 - BOARD EVAL FOR MCF51JM128 MCUDEMOJMSKT - BOARD DEMO S08JM CARD W/SOCKET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCF51JM128VLD
Manufacturer:
Freescale
Quantity:
992
Part Number:
MCF51JM128VLD
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
The average chip-junction temperature (T
where:
For most applications, P
is:
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring P
for a known T
value of T
2.4
Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling
precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices
can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade Integrated Circuits.
(http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device specification
requirements. Complete DC parametric and functional testing is performed per the applicable device specification at room
temperature followed by hot temperature, unless specified otherwise in the device specification.
Freescale Semiconductor
A
Human Body
Latch-up
.
Electrostatic Discharge (ESD) Protection Characteristics
T
I
A
DD
A
3
4
. Using this value of K, the values of P
= Ambient temperature, °Cθ
1s - Single Layer Board, one signal layer
2s2p - Four Layer Board, 2 signal and 2 power layers
× V
Model
DD
I/O
, Watts — chip internal powerP
<< P
int
and can be neglected. An approximate relationship between P
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Table 8. ESD and Latch-up Test Conditions
MCF51JM128 ColdFire Microcontroller, Rev. 3
K = P
J
) in °C can be obtained from:
D
JA
P
T
= Package thermal resistance, junction-to-ambient, °C/WP
× (T
D
J
= K ÷ (T
= T
A
D
+ 273°C) + θ
A
Description
and T
I/O
+ (P
= Power dissipation on input and output pins — user determined
J
J
+ 273°C)
D
can be obtained by solving equations 1 and 2 iteratively for any
× θ
JA
JA
)
× (P
D
)
2
Preliminary Electrical Characteristics
Symbol
R1
C
D
and T
Value
1500
–2.5
100
7.5
3
J
(if P
D
D
= P
Unit
I/O
(at equilibrium)
pF
Ω
V
V
int
is neglected)
+ P
I/O
Eqn. 1
Eqn. 2
Eqn. 3
P
int
17
=

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