M30262F8GP#U9 Renesas Electronics America, M30262F8GP#U9 Datasheet - Page 206
![IC M16C/TINY MCU FLASH 48LQFP](/photos/28/61/286102/48-lqfp__plqp0048kb-a_sml.jpg)
M30262F8GP#U9
Manufacturer Part Number
M30262F8GP#U9
Description
IC M16C/TINY MCU FLASH 48LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/Tiny/26r
Datasheets
1.M30622SAFPU5.pdf
(308 pages)
2.M30262F4GPU3.pdf
(41 pages)
3.M30262F4GPU3.pdf
(241 pages)
Specifications of M30262F8GP#U9
Core Processor
M16C/60
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, IEBus, SIO, UART/USART
Peripherals
DMA, WDT
Number Of I /o
38
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
48-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M30262F8GP#U9M30262F8GP#D3
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
M30262F8GP#U9M30262F8GP#D5
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
M30262F8GP#U9M30262F8GP#U3
Manufacturer:
Renesas Electronics America
Quantity:
10 000
198
CPU Rewrite Mode (Flash Memory Version)
Figure 1.20.4. Block erase flowchart
Block Erase Command (20
By writing the command code “20
in the second bus cycle that follows to the block address of a flash memory block, the system initiates
an auto erase (erase and erase verify) operation.
Whether the auto erase operation is completed can be confirmed by reading the status register or the
flash memory control register 0. At the same time the auto erase operation starts, the read status
register mode is automatically entered, so the content of the status register can be read out. The
status register bit 7 (SR7) is set to 0 at the same time the auto erase operation starts and is returned
to 1 upon completion of the auto erase operation. In this case, the read status register mode remains
active until the Read Array command (FF
flash memory is reset using its reset bit.
The RY/BY status flag of the flash memory control register 0 is 0 during auto erase operation and 1
when the auto erase operation is completed as is the status register bit 7.
After the auto erase operation is completed, the status register can be read out to know the result of
the auto erase operation. For details, refer to the section where the status register is detailed.
Figure 1.20.4 shows an example of a block erase flowchart.
Each block of the flash memory can be protected against erasure by using a lock bit. For details, refer
to the section where the data protect function is detailed.
During EW1 mode, do not execute this command on blocks in which the control program is stored.
Preliminary Specifications Rev. 0.9
Specifications in this manual are tentative and subject to change.
Check full status check
Note 1: Refer to Figure 1.20.6
Note 2: If the error occurs, try to execute clear status register command,
Block address
Status register
Write D0
Block erase
Write 20
completed
(Note 1)
RY/BY=1?
SR7=1?
Start
then block erase command at least three times until erase error
disappears.
read
or
16
YES
/D0
16
16
16
Renesas Technology Corp.
16
)
” in the first bus cycle and the confirmation command code “D0
NO
Error
16
) or Read Lock Bit Status command (71
Erase error (Note 2)
(Set an address to even address in the user
(Set an address to even address in the
ROM area when reading the status register)
user ROM area when write 20
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
16
)
16
M16C/26 Group
) is written or the
16
”