SAK-XC864L-1FRI 5V AA Infineon Technologies, SAK-XC864L-1FRI 5V AA Datasheet - Page 40

• Manufacturer Part Number: SAK-XC864L-1FRI 5V AA
• Description: IC MCU 8BIT 4KB FLASH 20TSSOP
• Manufacturer: Infineon Technologies
• Series: XC8xxr

Specifications of SAK-XC864L-1FRI 5V AA

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 86MHz
• Connectivity: LIN, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 9
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 20-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

3.3
The Flash memory provides an embedded user-programmable non-volatile memory,
allowing fast and reliable storage of user code and data. It is operated from a single 2.5 V
supply from the Embedded Voltage Regulator (EVR) and does not require additional
programming or erasing voltage. The sectorization of the Flash memory allows each
sector to be erased independently.
Features:
• In-System Programming (ISP) via UART
• In-Application Programming (IAP)
• Error Correction Code (ECC) for dynamic correction of single-bit errors
• Background program and erase operations for CPU load minimization
• Support for aborting erase operation
• 32-byte minimum program width
• 1-sector minimum erase width
• 1-byte read access
• Operating supply voltage: 2.5 V ± 7.5 %
• Read access time: 3 ×
• Program time: 209440 /
• Erase time: 8175360 /
Table 13
Table 13
Retention
20 years
5 years
2 years
2 years
1)
1)
2)
3)
Data Sheet
32-byte wordline can be programmed twice, i.e., two gate disturbs allowed.
Values shown here are typical values. f
frequency range for Flash read access.
Values shown here are typical values. f
programming and erasing. f
One cycle refers to the programming of all wordlines in a sector and erasing of sector. The Flash endurance
data specified in
- the maximum number of erase cycles per Flash sector must not exceed 100,000 cycles.
- the maximum number of erase cycles per Flash bank must not exceed 300,000 cycles.
- the maximum number of program cycles per Flash bank must not exceed 2,500,000 cycles.
shows the Flash data retention and endurance targets.
Flash Memory
Flash Data Retention and Endurance (Operating Conditions apply)
Table 13
Endurance
1,000 cycles
10,000 cycles
70,000 cycles
100,000 cycles
is valid only if the following conditions are fulfilled:
sysmin
f
t
SYS
CCLK
f
SYS
is used for obtaining the worst case timing.
= 102 ms
= 2.6 ms
= 112.5 ns
1)
1)
sys
sys
= 80 MHz ± 7.5% (f
3)
= 80 MHz ± 7.5% is the only frequency range for Flash
3)
2)
36
up to 4 Kbytes
Size
1 Kbyte
512 bytes
128 bytes
CCLK
= 26.7 MHz ± 7.5 %) is the maximum
Functional Description
V 1.1, 2009-03
XC864