AT90S2313-4SI Atmel, AT90S2313-4SI Datasheet - Page 65

MCU 2K FLASH 4MHZ 20-SOIC

AT90S2313-4SI

Manufacturer Part Number
AT90S2313-4SI
Description
MCU 2K FLASH 4MHZ 20-SOIC
Manufacturer
Atmel
Series
AVR® 90Sr
Datasheet

Specifications of AT90S2313-4SI

Core Processor
AVR
Core Size
8-Bit
Speed
4MHz
Connectivity
SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
15
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 6 V
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
20-SOIC (7.5mm Width)
Data Bus Width
8 bit
Data Ram Size
128 B
Interface Type
SPI, UART
Maximum Clock Frequency
4 MHz
Number Of Programmable I/os
15
Number Of Timers
1 x 8 bit
Operating Supply Voltage
2.7 V to 6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Data Converters
-
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT90S2313-4SI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Reading the Flash
Programming the EEPROM
Reading the EEPROM
Programming the Fuse Bits
Programming the Lock Bits
0839I–AVR–06/02
The algorithm for reading the Flash memory is as follows (refer to “Programming the
Flash” for details on command and address loading):
1. A: Load Command “0000 0010”.
2. B: Load Address High Byte ($00 - $03).
3. C: Load Address Low Byte ($00 - $FF).
4. Set OE to “0”, and BS to “0”. The Flash word low byte can now be read at DATA.
5. Set BS to “1”. The Flash word high byte can now be read from DATA.
6. Set OE to “1”.
The programming algorithm for the EEPROM data memory is as follows (refer to “Pro-
gramming the Flash” for details on command, address and data loading):
1. A: Load Command “0001 0001”.
2. C: Load Address Low Byte ($00 - $7F).
3. D: Load Data Low Byte ($00 - $FF).
4. E: Write Data Low Byte.
The algorithm for reading the EEPROM memory is as follows (refer to “Programming the
Flash” for details on command and address loading):
1. A: Load Command “0000 0011”.
2. C: Load Address Low Byte ($00 - $7F).
3. Set OE to “0”, and BS to “0”. The EEPROM data byte can now be read at DATA.
4. Set OE to “1”.
The algorithm for programming the Fuse bits is as follows (refer to “Programming the
Flash” for details on command and data loading):
1. A: Load Command “0100 0000”.
2. D: Load Data Low Byte. Bit n = “0” programs and bit n = “1” erases the Fuse bit.
3. Give WR a
The algorithm for programming the Lock bits is as follows (refer to “Programming the
Flash” on page 63 for details on command and data loading):
1. A: Load Command “0010 0000”.
2. D: Load Data Low Byte. Bit n = “0” programs the Lock bit.
3. E: Write Data Low Byte.
The Lock bits can only be cleared by executing Chip Erase.
Bit 5 = SPIEN Fuse bit.
Bit 0 = FSTRT Fuse bit.
Bit 7 - 6, 4 - 1 = “1”. These bits are reserved and should be left unprogrammed (“1”).
found in Table 26. Programming the Fuse bits does not generate any activity on
the RDY/BSY pin.
Bit 2 = Lock Bit2
Bit 1 = Lock Bit1
Bit 7 - 3, 0 = “1”. These bits are reserved and should be left unprogrammed (“1”).
t
WLWH_PFB
wide negative pulse to execute the programming;
AT90S2313
t
WLWH_PFB
is
65

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