ATMEGA165-16AI Atmel, ATMEGA165-16AI Datasheet - Page 252
![IC AVR MCU 16K 16MHZ 64TQFP](/photos/12/13/121332/313-64-tqfp_sml.jpg)
ATMEGA165-16AI
Manufacturer Part Number
ATMEGA165-16AI
Description
IC AVR MCU 16K 16MHZ 64TQFP
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA165-16AI
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
SPI, UART/USART, USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
54
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TQFP, 64-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Parallel Programming
Enter Programming Mode
Considerations for Efficient
Programming
Chip Erase
Programming the Flash
2573G–AVR–07/09
The following algorithm puts the device in parallel programming mode:
1. Apply 4.5 - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in Table 108 on page 251 to “0000” and wait at
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns
5. Wait at least 50 µs before sending a new command.
The loaded command and address are retained in the device during programming. For
efficient programming, the following should be considered.
•
•
•
The Chip Erase will erase the Flash and EEPROM
bits are not reset until the program memory has been completely erased. The Fuse bits
are not changed. A Chip Erase must be performed before the Flash and/or EEPROM
are reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
The Flash is organized in pages, see Table 105 on page 249. When programming the
Flash, the program data is latched into a page buffer. This allows one page of program
data to be programmed simultaneously. The following procedure describes how to pro-
gram the entire Flash memory:
A. Load Command “Write Flash”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give XTAL1 a positive pulse. This loads the command.
B. Load Address Low byte
least 100 ns.
after +12V has been applied to RESET, will cause the device to fail entering pro-
gramming mode.
The command needs only be loaded once when writing or reading multiple memory
locations.
Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless
the EESAVE Fuse is programmed) and Flash after a Chip Erase.
Address high byte needs only be loaded before programming or reading a new 256
word window in Flash or 256 byte EEPROM. This consideration also applies to
Signature bytes reading.
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is
programmed.
CC
and GND.
(1)
memories plus Lock bits. The Lock
ATmega165/V
252
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