COP8SCR9IMT8 National Semiconductor, COP8SCR9IMT8 Datasheet - Page 13

• Manufacturer Part Number: COP8SCR9IMT8
• Description: IC MCU EEPROM 8BIT 32K 48-TSSOP
• Manufacturer: National Semiconductor
• Series: COP8™ 8Sr

Specifications of COP8SCR9IMT8

• Core Processor: COP8
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: Microwire/Plus (SPI), UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: *COP8SCR9IMT8

Output Current Levels
D Outputs
All Others
TRI-STATE Leakage
Allowable Sink Current per Pin
Maximum Input Current without Latchup (Note
5)
RAM Retention Voltage, V
Input Capacitance
Load Capacitance on D2
Voltage on G6 to Force Execution from Boot
ROM (Note 8)
G6 Rise Time to Force Execution from Boot
ROM
Input Current on G6 when Input
Flash Memory Data Retention
Flash Memory Number of Erase/Write Cycles
8.0 Electrical Characteristics
DC Electrical Characteristics (−40˚C ≤ T
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
AC Electrical Characteristics (−40˚C ≤ T
Instruction Cycle Time (t
Flash Memory Page Erase Time
Flash Memory Mass Erase Time
Frequency of MICROWIRE/PLUS in
Slave Mode
MICROWIRE/PLUS Setup Time (t
MICROWIRE/PLUS Hold Time (t
MICROWIRE/PLUS Output Propagation
Delay (t
Input Pulse Width
Source
Sink (Note 7)
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 7)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Crystal/Resonator
Interrupt Input High Time
Interrupt Input Low Time
UPD
)
Parameter
Parameter
C
R
)
(in HALT Mode)
>
UWH
V
UWS
CC
)
)
4.5V ≤ V
2.7V ≤ V
See Table 13, Typical
Flash Memory
Endurance
V
V
V
V
V
V
V
V
V
V
V
G6 rise time must be slower
than 100 nS
V
25˚C
See Table 13, Typical Flash
Memory Endurance
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
IN
(Continued)
= 11V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 5.5V
Conditions
CC
CC
Conditions
≤ 5.5V
<
CC
4.5V
OH
OH
OL
OL
OH
OH
OH
OH
OL
OL
13
= 5.5V
= 1.0V
= 0.4V
= 1.0V
= 0.4V
= 3.8V
= 1.8V
= 3.8V
= 1.8V
= 3.8V
= 1.8V
A
A
≤ +85˚C)
≤ +85˚C)
Min
0.5
1.5
20
20
1
1
2 x V
−0.5
Min
−10
100
(Continued)
3.5
3.5
2.0
−7
−4
10
−5
−7
−4
10
CC
Typ
1
8
Typ
500
100
10
5
Max
150
DC
DC
2
V
±
1000
CC
Max
+0.5
15
200
7
+ 7
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Units
MHz
ms
ms
µs
µs
ns
ns
ns
t
t
C
C
cycles
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
yrs
µA
µA
µA
pF
pF
nS
µA
V
V