MC68HC908SR12CB Freescale Semiconductor, MC68HC908SR12CB Datasheet - Page 68

no-image

MC68HC908SR12CB

Manufacturer Part Number
MC68HC908SR12CB
Description
IC MCU 12K FLASH 8MHZ 42-SDIP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC68HC908SR12CB

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
I²C, SCI
Peripherals
LVD, POR, PWM, Temp Sensor
Number Of I /o
29
Program Memory Size
12KB (12K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
42-DIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC68HC908SR12CB
Manufacturer:
TI/NSC
Quantity:
340
Part Number:
MC68HC908SR12CB
Manufacturer:
MOT
Quantity:
2 313
Part Number:
MC68HC908SR12CB
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Part Number:
MC68HC908SR12CB
Quantity:
1
Company:
Part Number:
MC68HC908SR12CB
Quantity:
7 840
FLASH Memory
4.7 FLASH Program Operation
Data Sheet
68
NOTE:
Programming of the FLASH memory is done on a row basis. A row
consists of 64 consecutive bytes starting from addresses $xx00, $xx40,
$xx80, or $xxC0. The procedure for programming a row of the FLASH
memory is outlined below:
This program sequence is repeated throughout the memory until all data
is programmed.
Programming and erasing of FLASH locations cannot be performed by
executing code from the FLASH memory; the code must be executed
from RAM. While these operations must be performed in the order as
shown, but other unrelated operations may occur between the steps. Do
not exceed t
Characteristics.
10. Wait for time, t
11. Clear the HVEN bit.
12. After time, t
1. Set the PGM bit. This configures the memory for program
2. Write any data to any FLASH address within the row address
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write data to the FLASH address to be programmed.
7. Wait for time, t
8. Repeat step 6 and 7 until all the bytes within the row are
9. Clear the PGM bit.
operation and enables the latching of address and data for
programming.
range desired.
programmed.
mode.
Prog
maximum. See
FLASH Memory
rcv
Prog
nvh
(1µs), the memory can be accessed again in read
nvs
pgs
(5µs).
(30µs).
(10µs).
(5µs).
MC68HC908SR12•MC68HC08SR12 — Rev. 5.0
24.18 FLASH Memory
Freescale Semiconductor

Related parts for MC68HC908SR12CB